Gan Systems GS-EVB-HBDB-IMS Manuel technique - Page 11

Parcourez en ligne ou téléchargez le pdf Manuel technique pour {nom_de_la_catégorie} Gan Systems GS-EVB-HBDB-IMS. Gan Systems GS-EVB-HBDB-IMS 20 pages. 650 v universal half bridge isolated driver motherboard for ims2 & ims3

Gan Systems GS-EVB-HBDB-IMS Manuel technique
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The half-bridge daughter power board is populated with GaN Systems' GS66516B (bottom-side cooled E-
mode transistor, rated at 650 V / 25 mΩ) or GS66508B (bottom-side cooled E-mode transistor, rated at 650
V / 50 mΩ).
Figure 11 GS66516B and GS66508B GaNPX® packaged GaN E-mode transistor
The main difference between the IMS2 daughter power board and the IMS3 daughter power board is the
thermal conductivity (K factor) of the dielectric layer of the IMS board.
Using this platform power designers can evaluate the electrical and thermal performance of GaN Systems'
E-mode transistor in high power, high-efficiency applications. The ordering information are listed below:
GS-EVB-HBDB-IMS TM Rev. 220329
650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

Figure 10 Compatible IMS3 daughter power boards

Figure 12 Cross-section view of a single layer IMS board

Please refer to the Evaluation Board/Kit Important Notice on page 19
© 2022 GaN Systems Inc.
GS-EVB-HBDB-IMS
& IMS3
Technical Manual
www.gansystems.com
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