Gan Systems GS65011-EVBEZ Manuel de l'utilisateur - Page 7

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Circuit Description

The GS65011-EVBEZ EVB is a GaN-based open-loop DC/DC Boost converter. It is

assembled with the EZDrive

(TL1454ACNSR) and a 650V 5×6 mm PDFN package GaN E-HEMT, (GS-065-011-1-L).

The PWM control signal is generated internally by the PWM controller, U2.

The EZDrive

uses a Si MOSFET controller to drive a GaN HEMT which has a lower

threshold voltage. The EZDrive

low-cost, low component-count circuit composed of two Zener diodes, one capacitor,

three resistors and one diode.

, ZD

clamp the positive and negative gate drive voltages. C

EZ1

EZ2

voltage for GaN E-HEMT turn-off. R

keep the GaN E-HEMT fully turned on. R

the turn-off speed.

The two operation modes for EZDrive

•

Mode 1: Assuming the Vcc of the controller is 12V, controller output is ON, the

driving voltage on the GaN E-HEMT is clamped to 6V by Zener diode ZD

rest of the Vcc, 6V, is stored across the capacitor C

Mode 2: The voltage stored in the C

•

can be turned off quickly.

Through this circuit, the Si MOSFET PWM controller's output voltage is converted to the

proper voltage thresholds for driving GaN Systems' E-HEMTs.

GSWPT-EVBEZ Rev190621

EZDrive

GaN driving circuit, a Si MOSFET PWM controller

circuit is shown in the dotted box in

sets the minimum driving current required to

controls the turn-on speed and R

are:

is applied to the gate reversely, so the GaN

Please refer to the Evaluation Board/Kit Important Notice on page 15

Open Loop Boost Evaluation Board

Figure

holds a negative

www.gansystems.com

GS65011-EVBEZ

User's Guide

2. It is a

controls

OFF

The

EZ.