Gan Systems GS-EVB-HBDB-IMS 기술 매뉴얼 - 페이지 11

{카테고리_이름} Gan Systems GS-EVB-HBDB-IMS에 대한 기술 매뉴얼을 온라인으로 검색하거나 PDF를 다운로드하세요. Gan Systems GS-EVB-HBDB-IMS 20 페이지. 650 v universal half bridge isolated driver motherboard for ims2 & ims3

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The half-bridge daughter power board is populated with GaN Systems' GS66516B (bottom-side cooled E-

mode transistor, rated at 650 V / 25 mΩ) or GS66508B (bottom-side cooled E-mode transistor, rated at 650

V / 50 mΩ).

Figure 11 GS66516B and GS66508B GaNPX® packaged GaN E-mode transistor

The main difference between the IMS2 daughter power board and the IMS3 daughter power board is the

thermal conductivity (K factor) of the dielectric layer of the IMS board.

Using this platform power designers can evaluate the electrical and thermal performance of GaN Systems'

E-mode transistor in high power, high-efficiency applications. The ordering information are listed below:

GS-EVB-HBDB-IMS TM Rev. 220329

650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

Figure 10 Compatible IMS3 daughter power boards

Figure 12 Cross-section view of a single layer IMS board

Please refer to the Evaluation Board/Kit Important Notice on page 19

GS-EVB-HBDB-IMS

& IMS3

Technical Manual