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Gan Systems GS-EVB-HBDB-IMS Manual técnico
____________________________________________________________________________________________________________________________________________
PART NUMBER
GSP66508HB-EVBIMS2
GSP66516HB-EVBIMS2
GS-EVB-IMS3-66508B-GS
GS-EVB-IMS3-66516B-GS
The IMS2 and IMS3 half-bridge daughter power boards are designed for users to gain hands-on experience
in the following ways:
•
Evaluate the GaN E-mode performance in any half-bridge based topology, over a range of
operating conditions. This can be done using either the accompanying power motherboard (P/N:
GS-EVB-HBDB-IMS) or with the users' own board for in-system prototyping.
•
Use as a thermal and electrical design reference of the GS66516B or GS66508B GaN
demanding high-power and high-efficiency applications.

4 Test Results

4.1 Double Pulse Test (GS-EVB-HBDB-IMS + GS-EVB-IMS3-66508B-GS)

•
Test condition: V
•
Measured peak V
•
Reliable hard switching with GS66508B is achieved at full rated current
GS-EVB-HBDB-IMS TM Rev. 220329
650 V Universal Half Bridge Isolated Driver Motherboard for IMS2

Table 3 Part numbers and description

DESCRIPTION
650 V GaN High Power IMS2 Half Bridge
650 V GaN High Power IMS2 Half Bridge
650 V GaN High Power IMS3 Half Bridge
650 V GaN High Power IMS3 Half Bridge
= 400V, I
= 30A, V
= +6V/-3V, L = 37uH, No RC Snubber, T
DS
D
GS
= 630V and 92 V/ns peak dV/dt
DS

Figure 13 Double pulse test setup schematics

Please refer to the Evaluation Board/Kit Important Notice on page 19
© 2022 GaN Systems Inc.
GS-EVB-HBDB-IMS
& IMS3
Technical Manual
GaN E-mode
GS66508B
GS66516B
GS66508B
GS66516B
® package in
PX
=25℃
J
www.gansystems.com
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