Cypress Semiconductor CY62136EV30 MoBL Spezifikationsblatt - Seite 4

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Cypress Semiconductor CY62136EV30 MoBL Spezifikationsblatt
[8]
Thermal Resistance
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
AC Test Loads and Waveforms
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Parameter
Description
V
V
for Data Retention
DR
CC
I
Data Retention Current
CCDR
[8]
t
Chip Deselect to Data
CDR
Retention Time
[9]
t
Operation Recovery
R
Time
Data Retention Waveform
V
CC
CE
Notes:
9. Full device operation requires linear V
Document #: 38-05569 Rev. *B
Test Conditions
Still Air, soldered on a 3 × 4.5 inch, two-layer
[8]
printed circuit board
[8]
R1
V
CC
GND
R2
Rise Time = 1 V/ns
Equivalent to: THÉVENIN EQUIVALENT
2.50V
16667
15385
8000
1.20
(Over the Operating Range)
V
= 1.0V
CC
CE > V
– 0.2V,
CC
V
> V
– 0.2V or V
IN
CC
DATA RETENTION MODE
V
CC(min)
t
CDR
> 100 µs or stable at V
ramp from V
to V
CC
DR
CC(min.)
ALL INPUT PULSES
90%
10%
R
OUTPUT
3.0V
1103
1554
645
1.75
[8, 9]
Conditions
< 0.2V
IN
V
> 1.0 V
DR
> 100 µs.
CC(min.)
CY62136EV30
MoBL
VFBGA
TSOP II
Package
Package
75
77
10
13
90%
10%
Fall Time = 1 V/ns
TH
V
TH
Unit
Ω
Ω
Ω
V
[4]
Min.
Typ.
Max.
1.0
0.8
3
0
t
RC
V
CC(min)
t
R
Page 4 of 12
®
Unit
°C/W
°C/W
Unit
V
µA
ns
ns
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