Cypress Semiconductor CY62148EV30 Spezifikationsblatt - Seite 11

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Document History Page
Document Title: CY62148EV30 MoBL
Document Number: 38-05576
Revision
ECN
Submission
**
223225
*A
247373
*B
414807
*C
464503
*D
833080
*E
890962
Document #: 38-05576 Rev. *G
®
4-Mbit (512K x 8) Static RAM
Orig. of
Date
Change
See ECN
AJU
New data sheet
See ECN
SYT
Changed from Advance Information to Preliminary
Moved Product Portfolio to Page 2
Changed V
Changed I
Changed typo in Data Retention Characteristics (t
Changed t
Changed t
45 ns Speed Bin
Changed t
Speed Bin
Changed t
Speed Bin
Changed t
45 ns Speed Bin
Changed t
Changed Ordering Information to include Pb-Free Packages
See ECN
ZSD
Changed from Preliminary information to Final
Changed the address of Cypress Semiconductor Corporation on Page #1 from
"3901 North First Street" to "198 Champion Court"
Removed 35ns Speed Bin
Removed "L" version of CY62148EV30
Changed ball C3 from DNU to NC.
Removed the redundant footnote on DNU.
Changed I
1.5 mA to 2 mA at f=1 MHz
Changed I
Changed I
μA to 7 μA.
Changed the AC test load capacitance value from 50pF to 30pF.
Changed I
Added I
Changed t
Changed t
Changed t
Changed t
Changed t
Updated the package diagram 36-pin VFBGA from *B to *C
Added 32-pin SOIC package diagram and pin diagram
Updated the ordering information table and replaced the Package Name column
with Package Diagram.
See ECN
NXR
Included Automotive Range in product offering
Updated Thermal Resistance table
Updated the Ordering Information
See ECN
VKN
Added footnote 8
Added V
See ECN
VKN
Removed Automotive part and its related information
Added footnote 2 related to SOIC package
Added footnote 9 related to I
Added AC values for 55 ns Industrial-SOIC range
Updated Ordering Information table
Description of Change
stabilization time in footnote #7 from 100 μs to 200 μs
CC
from 2.0 μA to 2.5 μA
CCDR
from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin
OHA
, t
from 12 to 15 ns for 35 ns Speed Bin and 15 to 18 ns for
HZOE
HZWE
from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns for 45 ns
SCE
from 12 to 18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 ns
HZCE
from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for
SD
from 15 to 18 ns for 35 ns Speed Bin
DOE
(max) value from 2 mA to 2.5 mA and I
CC
(Typ) value from 12 mA to 15 mA at f = f
CC
Typ values from 0.7 μA to 1 μA and Max values from 2.5
and I
SB1
SB2
from 2.5 μA to 7 μA.
CCDR
typical value.
CCDR
from 3 ns to 5 ns
LZOE
and t
from 6 ns to 10 ns
LZCE
LZWE
from 22 ns to 18 ns
HZCE
from 30 ns to 35 ns.
PWE
from 22 ns to 25 ns.
SD
spec for SOIC package
IL
SB2
®
MoBL
CY62148EV30
) from 100 μs to t
ns
R
RC
(Typ) value from
CC
max
Page 11 of 12
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