Cypress Semiconductor MoBL CY62126EV30 Spezifikationsblatt - Seite 4

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Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Over the Operating Range
Parameter
Description
V
V
for Data Retention
DR
CC
[7]
I
Data Retention Current
CCDR
[8]
t
Chip Deselect to Data
CDR
Retention Time
[9]
t
Operation Recovery Time
R
V
CC
CE
Notes
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full device AC operation requires linear V
Document #: 38-05486 Rev. *E
Test Conditions
Still Air, soldered on a 4.25 x 1.125 inch,
two-layer printed circuit board
Figure 3. AC Test Loads and Waveforms
V
CC
R2
Rise Time = 1 V/ns
Equivalent to: THÉVENIN EQUIVALENT
OUTPUT
2.2V - 2.7V
16600
15400
8000
1.2
Conditions
V
= V
, CE > V
– 0.2V,
CC
DR
CC
V
> V
– 0.2V or V
< 0.2V
IN
CC
IN
Figure 4. Data Retention Waveform
DATA RETENTION MODE
V
CC(min)
t
CDR
> 100 μs.
ramp from V
to V
CC
DR
CC(min)
MoBL
VFBGA
Package
58.85
17.01
ALL INPUT PULSES
90%
10%
GND
R
TH
V
TH
2.7V - 3.6V
1103
1554
645
1.75
Min
1.5
Industrial
Automotive
0
t
RC
V
V
> 1.5V
DR
®
, CY62126EV30
TSOP II
Unit
Package
28.2
°C/W
3.4
°C/W
90%
10%
Fall Time = 1 V/ns
Unit
Ohms
Ohms
Ohms
Volts
[1]
Typ
Max
Unit
V
μA
3
μA
30
ns
ns
CC(min)
t
R
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