Gan Systems GS-EVB-HBDB-IMS Manual técnico - Página 8
Navegue en línea o descargue pdf Manual técnico para Placa base Gan Systems GS-EVB-HBDB-IMS. Gan Systems GS-EVB-HBDB-IMS 20 páginas. 650 v universal half bridge isolated driver motherboard for ims2 & ims3
Imprimir página
____________________________________________________________________________________________________________________________________________
2.2 Gate Driver Circuit
A low-cost isolated gate driver circuit is used in the IMS EVB driver motherboard for each GaN device,
which is shown in Figure 5. Essential components are listed below:
o
U3 is the isolated gate driver (Silicon Labs P/N: Si8271)
o
U1, T1, D2, C2, C3, C8, and IC1 are the isolated push-pull power supply for the gate driver;
after the LDO chip IC1, the output is divided to +6/-3V to power the gate driver.
o
R2 and R3 are gate turn-on and off resistors.
2.3 5V Input and External PWM Signals Input
GS-EVB-HBDB-IMS TM Rev. 220329
650 V Universal Half Bridge Isolated Driver Motherboard for IMS2
Figure 5 Gate driver circuit (Silicon Labs P/N: Si8271)
Figure 6 External 5V and PWM signals connector pin
© 2022 GaN Systems Inc.
Please refer to the Evaluation Board/Kit Important Notice on page 19
GS-EVB-HBDB-IMS
& IMS3
Technical Manual
www.gansystems.com
8