Cypress Semiconductor CY62157CV33 Hoja de especificaciones - Página 4
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Imprimir páginaElectrical Characteristics
Parameter
Description
V
Output HIGH
OH
Voltage
V
Output LOW
OL
Voltage
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Leakage
IX
Current
I
Output Leakage
OZ
Current
I
V
Operating
CC
CC
Supply
Current
I
Automatic CE
SB1
Power-Down
Current—CMOS
Inputs
I
Automatic CE
SB2
Power-Down
Current—CMOS
Inputs
[7]
Thermal Resistance
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
Note:
7. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05014 Rev. *F
Over the Operating Range
Test Conditions
I
= –1.0 mA
OH
V
= 3.0V
CC
I
= 2.1 mA
OL
V
= 3.0V
CC
GND < V
< V
I
CC
GND < V
< V
, Output Disabled
O
CC
f = f
= 1/t
MAX
RC
f = 1 MHz
CE
> V
– 0.2V or
1
CC
CE
< 0.2V
2
V
> V
– 0.2V or
IN
CC
V
< 0.2V,
IN
f = f
(Address and Data
max
Only),
f = 0 (OE,WE,BHE,and BLE)
CE
> V
– 0.2V or
1
CC
CE
< 0.2V
2
V
> V
– 0.2V or
IN
CC
V
< 0.2V,
IN
f = 0, V
= 3.6V
CC
Still Air, soldered on a 3 x 4.5 inch, two-layer printed
circuit board
Min.
2.4
2.2
–0.3
Auto-A
–1
Auto-E
–10
Auto-A
–1
Auto-E
–10
V
= 3.6V
Auto-A
CC
I
= 0 mA
OUT
Auto-E
CMOS Levels
Auto-A/
Auto-E
Auto-A
Auto-E
Auto-A
Auto-E
Test Conditions
CY62157CV30/33
CY62157CV33-70
[2]
Typ.
Max.
Unit
V
0.4
V
V
+ 0.3V
V
CC
0.8
V
µA
+1
µA
+10
µA
+1
µA
+10
5.5
12
mA
7
15
1.5
3
µA
10
30
µA
10
80
µA
10
30
µA
10
80
FBGA
Unit
°C/W
55
°C/W
16
Page 4 of 13
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