Cypress Semiconductor CY7C1350G Hoja de especificaciones - Página 8

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Electrical Characteristics
Parameter
Description
I
Automatic CE
SB3
Power-Down
Current—CMOS
Inputs
I
Automatic CE
SB4
Power-Down
Current—TTL Inputs
[12]
Capacitance
Parameter
Description
C
Input Capacitance
IN
C
Clock Input Capacitance
CLK
C
Input/Output Capacitance
I/O
[12]

Thermal Resistance

Parameter
Description
Θ
Thermal Resistance (Junction to
JA
Ambient)
Θ
Thermal Resistance (Junction to
JC
Case)
AC Test Loads and Waveforms
3.3V I/O Test Load
OUTPUT
Z
= 50Ω
0
V
(a)
2.5V I/O Test Load
OUTPUT
Z
= 50Ω
0
V
(a)
Note:
12. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05524 Rev. *F
Over the Operating Range
V
= Max, Device Deselected, or
DD
≤ 0.3V or V
V
> V
IN
IN
f = f
= 1/t
MAX
CYC
V
= Max, Device Deselected,
DD
≥ V
≤ V
V
or V
IN
IH
IN
IL
Test Conditions
T
= 25°C, f = 1 MHz,
A
V
= 3.3V, V
DD
Test Conditions
Test conditions follow standard
test methods and procedures for
measuring thermal impedance,
per EIA/JESD51.
3.3V
OUTPUT
R
= 50Ω
L
5 pF
= 1.5V
T
INCLUDING
JIG AND
SCOPE
2.5V
OUTPUT
R
= 50Ω
L
5 pF
= 1.25V
T
INCLUDING
JIG AND
SCOPE
[10, 11]
(continued)
Test Conditions
4-ns cycle, 250 MHz
– 0.3V
DDQ
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
All speeds
, f = 0
100 TQFP
= 3.3V
DDQ
100 TQFP
Package
R = 317Ω
V
DDQ
10%
GND
R = 351Ω
≤ 1 ns
(b)
R = 1667Ω
V
DDQ
10%
GND
R =1538Ω
≤ 1 ns
(b)
CY7C1350G
Min.
Max.
105
95
85
75
65
45
119 BGA
Max.
Max.
5
5
5
5
5
7
119 BGA
Package
30.32
34.1
6.85
14.0
ALL INPUT PULSES
90%
90%
10%
≤ 1 ns
(c)
ALL INPUT PULSES
90%
90%
10%
≤ 1 ns
(c)
Page 8 of 15
Unit
mA
mA
mA
mA
mA
mA
Unit
pF
pF
pF
Unit
°C/W
°C/W
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