Cypress Semiconductor Set-top Box Clock Generator with VCXO CY24713 Hoja de especificaciones - Página 2

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Absolute Maximum Conditions
Parameter
V
Supply Voltage
DD
T
Storage Temperature
S
T
Junction Temperature
J
Digital Inputs
Digital Outputs referred to V
Electrostatic Discharge
Analog Input
Pullable Crystal Specifications
Parameter
F
Nominal crystal frequency
NOM
C
Nominal load capacitance
LNOM
R
Equivalent series resistance (ESR)
1
R
/R
Ratio of third overtone mode ESR to fundamen-
3
1
tal mode ESR
DL
Crystal drive level
F
Third overtone separation from 3*F
3SEPHI
F
Third overtone separation from 3*F
3SEPLO
C
Crystal shunt capacitance
0
C
/C
Ratio of shunt to motional capacitance
0
1
C
Crystal motional capacitance
1

Recommended Operating Conditions

Parameter
V
Operating Voltage
DD
T
Ambient Temperature
A
C
Max. Load Capacitance
LOAD
t
Power up time for all VDDs to reach minimum specified voltage (power
PU
ramps must be monotonic)

DC Electrical Characteristics

Parameter
Description
I
Output High Current
OH
I
Output Low Current
OL
C
Input Capacitance
IN
I
Input Leakage Current
IZ
f
VCXO pullability range
ΔXO
V
VCXO input range
VCXO
I
Supply Current
VDD
Note
2. Rated for 10 years
Document #: 38-07396 Rev. *A
Description
[2]
DD
Description
NOM
NOM
Description
V
= V
– 0.5, V
OH
DD
V
= 0.5, V
= 3.3V
OL
DD
Condition
Parallel resonance, funda-
mental mode, AT cut
Fundamental mode
Ratio used because typical R
1
values are much less than the
maximum spec.
No external series resistor as-
sumed
High side
Low side
Conditions
= 3.3V
DD
CY24713
Min
Max
Unit
–0.5
7.0
–65
125
°C
–
125
°C
V
– 0.3
V
+ 0.3
SS
DD
V
– 0.3
V
+ 0.3
SS
DD
–
2000
–0.5
7.0
Min
Typ.
Max
Unit
–
27
–
MHz
–
14
–
pF
–
–
25
3
–
–
–
0.5
2.0
mW
300
–
–
ppm
–
–
–150
ppm
–
–
7
pF
180
–
250
14.4
18
21.6
pF
Min
Typ.
Max
Unit
3.135
3.3
3.465
0
–
70
°C
–
–
15
pF
0.05
–
500
ms
Min
Typ.
Max
Unit
12
24
–
mA
12
24
–
mA
–
–
7
pF
μA
–
5
–
±150
–
–
ppm
0
–
V
DD
–
25
30
mA
Page 2 of 5
V
V
V
V
V
Ω
V
V
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