Cypress Semiconductor CY62138FV30 Fiche technique - Page 3

Parcourez en ligne ou téléchargez le pdf Fiche technique pour {nom_de_la_catégorie} Cypress Semiconductor CY62138FV30. Cypress Semiconductor CY62138FV30 14 pages. 2-mbit (256k x 8) static ram mobl

Cypress Semiconductor CY62138FV30 Fiche technique

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature .................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................... 55°C to +125°C
Supply Voltage to Ground
Potential ........................................................... –0.3V to 3.9V
DC Voltage Applied to Outputs
[4, 5]
in High-Z State
.......................................... –0.3V to 3.9V

Electrical Characteristics

Parameter
Description
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Leakage Current
IX
I
Output Leakage Current
OZ
I
V
Operating Supply Current f = f
CC
CC
I
Automatic CE Power Down
SB1
Current CMOS Inputs
[7]
I
Automatic CE Power Down
SB2
Current CMOS Inputs
Capacitance
(For all packages)
Parameter
Description
C
Input Capacitance
IN
C
Output Capacitance
OUT
Notes
4. V
=
2.0V for pulse durations less than 20 ns.
IL(min)
5. V
= V
+0.75V for pulse durations less than 20 ns.
IH(max)
CC
6. Full device AC operation assumes a 100 µs ramp time from 0 to V
7. Only chip enables (CE
and CE
) must be at CMOS level to meet the I
1
2
8. Tested initially and after any design or process changes that may affect these parameters.
Document #: 001-08029 Rev. *E
(Over the Operating Range)
Test Conditions
I
= –0.1 mA
OH
I
= –1.0 mA, V
OH
CC
I
= 0.1 mA
OL
I
= 2.1 mA, V
OL
CC
V
= 2.2V to 2.7V
CC
V
= 2.7V to 3.6V
CC
V
= 2.2V to 2.7V For BGA package
CC
V
= 2.7V to 3.6V
CC
V
= 2.2V to 3.6V For other packages
CC
GND < V
< V
I
CC
GND < V
< V
,
O
CC
output disabled
= 1/t
max
RC
f = 1 MHz
CE
> V
– 0.2V or CE
1
CC
V
> V
– 0.2V, V
IN
CC
f = f
(address and data only),
max
f = 0 (OE, and WE), V
CE
> V
– 0.2V or CE
1
CC
V
> V
– 0.2V or V
IN
CC
f = 0, V
= 3.60V
CC
[8]
Test Conditions
T
= 25°C, f = 1 MHz,
A
V
= V
CC
CC(typ.)
(min) and 200 µs wait time after V
CC
/ I
SB2
CY62138FV30 MoBL
[4, 5]
DC Input Voltage
.......................................–0.3V to 3.9V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA
Product
Range
CY62138FV30LL Industrial –40°C to +85°C 2.2V to 3.6V
Min
2.0
> 2.70V
2.4
> 2.70V
1.8
2.2
–0.3
–0.3
–0.3
–1
–1
V
= V
CC
CCmax
I
= 0 mA
OUT
CMOS levels
< 0.2V,
2
< 0.2V),
IN
= 3.60V
CC
< 0.2V,
2
< 0.2V,
IN
stabilization.
CC
spec. Other inputs can be left floating.
CCDR
®
Ambient
[6]
V
CC
Temperature
45 ns
Unit
[3]
Typ
Max
V
V
0.4
V
0.4
V
V
+ 0.3V
V
CC
V
+ 0.3V
V
CC
0.6
V
0.8
V
0.6
V
µA
+1
µA
+1
13
18
mA
1.6
2.5
µA
1
5
µA
1
5
Max
Unit
10
pF
10
pF
Page 3 of 13
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