Cypress Semiconductor CY62167EV30 Fiche technique - Page 13

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Document History Page
Document Title: CY62167EV30 MoBL
Document Number: 38-05446
Orig. of
REV.
ECN NO.
Change
**
202600
*A
463674
NXR
*B
469169
*C
1130323
VKN
*D
1323984
VKN/AESA
*E
2678799
VKN/PYRS
Document #: 38-05446 Rev. *E
®
16-Mbit (1M x 16 / 2M x 8) Static RAM
Submission
Date
Description of Change
AJU
01/23/2004
New Data Sheet
See ECN
Converted from Advance Information to Preliminary
Removed 'L' bin and 35 ns speed bin from product offering
Modified Data sheet to include x8 configurability.
Changed ball E3 in FBGA pinout from DNU to NC
Changed the I
Changed the I
Changed Vcc stabilization time in footnote #9 from 100 µs to 200 µs
Changed the AC Test Load Capacitance value from 50 pF to 30 pF
Corrected typo in Data Retention Characteristics (t
Changed t
Changed t
Changed t
Changed t
Changed t
Changed t
Updated 48 ball FBGA Package Information.
Updated the Ordering Information table
NSI
See ECN
Minor Change: Moved to external web
See ECN
Converted from preliminary to final
Changed I
Changed I
Changed I
Added V
Added footnote# 10 related to I
Changed I
Changed I
Added footnote# 15 related to AC timing parameters
See ECN
Modified I
Added 48-Ball VFBGA (6 x 7 x 1mm) package
Added footnote# 1 related to VFBGA (6 x 7 x 1mm) package
Updated Ordering Information table
03/25/2009
Added Automotive-A information
value from 1.3 μA to 1.5 μA
SB2(Typ)
value from 40 mA to 25 mA
CC(Max)
, t
, t
, and t
from 6 ns to 10 ns
OHA
LZCE
LZBE
LZWE
from 3 ns to 5 ns.
LZOE
, t
, t
, and t
HZOE
HZCE
HZBE
HZWE
, t
, and t
from 40 ns to 35 ns
SCE
AW
BW
from 30 ns to 35 ns
PE
from 20 ns to 25 ns
SD
max spec from 2.8 mA to 4.0 mA for f=1MHz
CC
typ spec from 22 mA to 25 mA for f=f
CC
max spec from 25 mA to 30 mA for f=f
CC
spec for TSOP I package and footnote# 9
IL
and I
SB2
spec from 8.5 μA to 12 μA
and I
SB1
SB2
spec from 8 μA to 10 μA
CCDR
spec for TSOP I package
CCDR
CY62167EV30 MoBL
) from 100 µs to t
R
from 15 ns to 18 ns
max
max
CCDR
Page 13 of 14
®
ns
RC
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