Cypress Semiconductor CY7C1334H Fiche technique - Page 7

Parcourez en ligne ou téléchargez le pdf Fiche technique pour {nom_de_la_catégorie} Cypress Semiconductor CY7C1334H. Cypress Semiconductor CY7C1334H 14 pages. 2-mbit (64k x 32) pipelined sram with nobl architecture

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Maximum Rating

(Above which the useful life may be impaired. For user guide-
lines not tested.)
Storage Temperature ..................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage on V
Relative to GND.........−0.5V to +4.6V
DD
Relative to GND .......−0.5V to +V
Supply Voltage on V
DDQ
DC Voltage Applied to Outputs
in Tri-State ................................................−0.5V to V

Electrical Characteristics

Parameter
Description
V
Power Supply Voltage
DD
V
I/O Supply Voltage
DDQ
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Leakage Current
X
except ZZ and MODE
Input Current of MODE
Input Current of ZZ
Output Leakage Current GND ≤ V
I
OZ
I
V
Operating Supply
DD
DD
Current
I
Automatic CE
SB1
Power-Down
Current—TTL Inputs
I
Automatic CE
SB2
Power-Down
Current—CMOS Inputs
I
Automatic CE
SB3
Power-Down
Current—CMOS Inputs
I
Automatic CE
SB4
Power-Down
Current—TTL Inputs
Notes:
9. Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
IH
DD
10. T
: Assumes a linear ramp from 0V to V
Power-up
Document #: 38-05678 Rev. *B
DD
+ 0.5V
DDQ
[9, 10]
Over the Operating Range
Test Conditions
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O, I
= –4.0 mA
OH
for 2.5V I/O, I
= –1.0 mA
OH
for 3.3V I/O, I
= 8.0 mA
OL
for 2.5V I/O, I
= 1.0 mA
OL
[9]
for 3.3V I/O
for 2.5V I/O
[9]
for 3.3V I/O
for 2.5V I/O
GND ≤ V
≤ V
I
DDQ
Input = V
SS
Input = V
DD
Input = V
SS
Input = V
DD
≤ V
Output Disabled
I
DDQ,
V
= Max., I
= 0 mA,
DD
OUT
f = f
= 1/t
MAX
CYC
V
= Max, Device
DD
Deselected,
≥ V
≤ V
V
or V
IN
IH
IN
IL
f = f
= 1/t
MAX
CYC
V
= Max, Device
DD
≤ 0.3V or
Deselected, V
IN
V
> V
– 0.3V, f = 0
IN
DDQ
V
= Max, Device
DD
≤ 0.3V or
Deselected, or V
IN
V
> V
– 0.3V
IN
DDQ
f = f
= 1/t
MAX
CYC
V
= Max, Device
DD
Deselected,
≥ V
≤ V
V
or V
, f = 0
IN
IH
IN
IL
/2), undershoot: V
CYC
(min.) within 200 ms. During this time V
DD
DC Input Voltage ....................................... −0.5V to V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA

Operating Range

Ambient
Range
Temperature (T
)
A
Com'l
0°C to +70°C
Ind'l
–40°C to +85°C
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
All speeds
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
All Speeds
(AC)> –2V (Pulse width less than t
IL
CYC
< V
and V
< V
.
IH
DD
DDQ
DD
CY7C1334H
+ 0.5V
DD
V
V
DD
DDQ
3.3V - 5%/+10% 2.5V - 5% to
V
DD
Min.
Max.
Unit
3.135
3.6
V
3.135
V
V
DD
2.375
2.625
V
2.4
V
2.0
0.4
V
0.4
2.0
V
+ 0.3V
V
DD
1.7
V
+ 0.3V
DD
–0.3
0.8
V
–0.3
0.7
µA
–5
5
−30
µA
µA
5
−5
µA
µA
30
−5
µA
5
240
mA
225
mA
100
mA
90
mA
40
mA
85
mA
75
mA
45
mA
/2).
Page 7 of 13
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