Cypress Semiconductor MoBL CY62138F Fiche technique - Page 4
Parcourez en ligne ou téléchargez le pdf Fiche technique pour {nom_de_la_catégorie} Cypress Semiconductor MoBL CY62138F. Cypress Semiconductor MoBL CY62138F 11 pages. 2-mbit (256k x 8) static ram
Imprimer la pageAC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Parameter
Description
V
V
for Data Retention
DR
CC
[7]
I
Data Retention Current
CCDR
[8]
t
Chip Deselect to Data
CDR
Retention Time
[9]
t
Operation Recovery Time
R
Data Retention Waveform
V
CC
CE
Notes:
9. Full device AC operation requires linear V
10. CE is the logical combination of CE
Document #: 001-13194 Rev. *A
R2
Rise Time = 1 V/ns
Equivalent to:
THEVENIN
OUTPUT
(Over the Operating Range)
V
= V
, CE
CC
DR
1
V
> V
- 0.2V or V
IN
CC
[10]
DATA RETENTION MODE
V
CC(min)
t
CDR
> 100 µs or stable at V
ramp from V
to V
CC
DR
CC(min)
and CE
. When CE
is LOW and CE
1
2
1
ALL INPUT PULSES
3.0V
90%
10%
GND
EQUIVALENT
R
TH
V
5.0V
1800
990
639
1.77
Conditions
− 0.2V or CE
> V
< 0.2V,
CC
2
< 0.2V
IN
V
> 2.0V
DR
> 100 µs.
CC(min)
is HIGH, CE is LOW; when CE
is HIGH or CE
2
1
CY62138F MoBL
90%
10%
Fall Time = 1 V/ns
Unit
Ω
Ω
Ω
V
[3]
Min
Typ
Max
Unit
2.0
V
µA
1
5
0
ns
t
ns
RC
V
CC(min)
t
R
is LOW, CE is HIGH.
2
Page 4 of 10
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