Cypress Semiconductor Perform CY62146E MoBL Manuel - Page 7
Parcourez en ligne ou téléchargez le pdf Manuel pour {nom_de_la_catégorie} Cypress Semiconductor Perform CY62146E MoBL. Cypress Semiconductor Perform CY62146E MoBL 12 pages. 4-mbit (256k x 16) static ram
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ADDRESS
CE
WE
BHE/BLE
OE
NOTE 19
DATA IO
ADDRESS
CE
WE
BHE/BLE
OE
DATA IO
NOTE 19
Notes
17. Data IO is high impedance if OE = V
18. If CE goes HIGH simultaneously with WE = V
19. During this period, the IOs are in output state. Do not apply input signals.
Document Number: 001-07970 Rev. *D
(continued)
Figure 6. Write Cycle No 1: WE Controlled
t
AW
t
SA
t
HZOE
Figure 7. Write Cycle 2: CE Controlled
t
SA
t
AW
t
HZOE
.
IH
, the output remains in a high impedance state.
IH
[13, 17, 18]
t
WC
t
SCE
t
PWE
t
BW
t
SD
DATA
IN
[13, 17, 18]
t
WC
t
SCE
t
PWE
t
BW
t
SD
DATA
IN
CY62146E MoBL
t
HA
t
HD
t
HA
t
HD
Page 7 of 11
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