Cypress Semiconductor Perform CY62167E MoBL Manuel - Page 4
Parcourez en ligne ou téléchargez le pdf Manuel pour {nom_de_la_catégorie} Cypress Semiconductor Perform CY62167E MoBL. Cypress Semiconductor Perform CY62167E MoBL 13 pages. 16-mbit (1m x 16 / 2m x 8) static ram
Imprimer la pageAC Test Loads and Waveforms
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Over the Operating Range
Parameter
Description
V
V
for Data Retention
DR
CC
[9]
I
Data Retention Current
CCDR
[10]
t
Chip Deselect to Data
CDR
Retention Time
[11]
t
Operation Recovery
R
Time
Data Retention Waveform
V
CC
CE
or
1
BHE. BLE
or
CE
2
Notes
11. Full device operation requires linear V
12. BHE. BLE is the AND of BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling BHE and BLE.
Document #: 001-15607 Rev. *A
R1
V
CC
GND
R2
RISE TIME= 1 V/ns
EQUIVALENT TO: THÉVENIN EQUIVALENT
V
= V
CC
DR
CE
> V
– 0.2V, CE
1
CC
V
> V
– 0.2V or V
IN
CC
[12]
V
(min)
CC
t
CDR
(min) > 100 µs or stable at V
ramp from V
to V
CC
DR
CC
ALL INPUT PULSES
90%
10%
R
TH
OUTPUT
Values
1800
990
639
1.77
Conditions
< 0.2V,
2
< 0.2V
IN
DATA RETENTION MODE
> 2.0 V
V
DR
(min) > 100 µs.
CC
CY62167E MoBL
90%
10%
FALL TIME= 1 V/ns
V
Unit
Ω
Ω
Ω
V
[4]
Min
Typ
Max
2.0
12
0
t
RC
V
(min)
CC
t
R
Page 4 of 12
®
Unit
V
µA
ns
ns
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