Cypress Semiconductor CY62148E Lembar Spesifikasi - Halaman 4
Jelajahi secara online atau unduh pdf Lembar Spesifikasi untuk Perangkat Keras Komputer Cypress Semiconductor CY62148E. Cypress Semiconductor CY62148E 11 halaman. Mobl 4-mbit (512k x 8) static ram
Halaman Cetak
Thermal Resistance
[10]
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Parameter
Description
V
V
for Data Retention
DR
CC
I
Data Retention Current
CCDR
[10]
t
Chip Deselect to Data Retention Time
CDR
[11]
t
Operation Recovery Time
R
Data Retention Waveform
V
CC
CE
Note
11. Full device operation requires linear V
Document #: 38-05442 Rev. *F
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
3.0V
R2
GND
Rise Time = 1 V/ns
Equivalent to:
THEVENIN
OUTPUT
5.0V
1800
990
639
1.77
(Over the Operating Range)
V
= V
CC
DR
V
> V
IN
CC
DATA RETENTION MODE
V
CC(min)
t
CDR
> 100 µs or stable at V
ramp from V
to V
CC
DR
CC(min)
ALL INPUT PULSES
90%
10%
EQUIVALENT
R
TH
V
Conditions
, CE > V
– 0.2V,
Ind'l/Auto-A
CC
– 0.2V or V
< 0.2V
IN
V
> 2.0V
DR
> 100 µs.
CC(min)
CY62148E MoBL
SOIC
TSOP II
Unit
Package
Package
°C/W
75
77
°C/W
10
13
90%
10%
Fall Time = 1 V/ns
Unit
Ω
Ω
Ω
V
[3]
Min
Typ
Max Unit
2
1
7
0
t
RC
V
CC(min)
t
R
Page 4 of 10
®
V
µA
ns
ns
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