Cypress Semiconductor CY7C150 Lembar Spesifikasi - Halaman 3

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Switching Characteristics

Parameter
Description
READ CYCLE
t
Read Cycle Time
RC
t
Address to Data Valid
AA
t
Output Hold from Address
OHA
Change
t
CS LOW to Data Valid
ACS
t
CS LOW to Low Z
LZCS
t
CS HIGH to High Z
HZCS
t
OE LOW to Data Valid
DOE
t
OE LOW to Low Z
LZOE
t
OE HIGH to High Z
HZOE
[8]
WRITE CYCLE
t
Write Cycle Time
WC
t
CS LOW to Write End
SCS
t
Address Set-Up to Write End
AW
t
Address Hold from Write End
HA
t
Address Set-Up to Write Start
SA
t
WE Pulse Width
PWE
t
Data Set-Up to Write End
SD
t
Data Hold from Write End
HD
t
WE HIGH to Low Z
LZWE
t
WE LOW to High Z
HZWE
RESET CYCLE
t
Reset Cycle Time
RRC
t
Address Valid to Beginning of
SAR
Reset
t
Write Enable HIGH to Beginning
SWER
of Reset
t
Chip Select LOW to Beginning of
SCSR
Reset
t
Reset Pulse Width
PRS
t
Chip Select Hold After End of
HCSR
Reset
t
Write Enable Hold After End of
HWER
Reset
t
Address Hold After End of Reset
HAR
t
Reset HIGH to Output in Low Z
LZRS
t
Reset LOW to Output in
HZRS
[6,7]
High Z
Notes:
5.
Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
/I
and 30-pF load capacitance.
OL
OH
6.
At any given temperature and voltage condition, t
7.
t
, t
, t
, and t
are tested with C
HZCS
HZOE
HZR
HZWE
8.
The internal write time of the memory is defined by the overlap of CS LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate
a write by going HIGH. The data input set-up and hold timing should be reference to the rising edge of the signal that terminates the write.
Document #: 38-05024 Rev. **
[2,5]
Over the Operating Range
7C150 10
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
10
10
2
8
[6]
0
[6,7]
6
6
[6]
0
[6,7]
6
10
6
8
2
2
6
6
2
[6]
0
[6,7]
6
20
0
0
0
10
0
8
10
[6]
0
6
is less than t
for any given device.
HZ
LZ
= 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage.
L
7C150 12
7C150 15
7C150 25
12
15
25
12
15
2
2
10
12
0
0
8
11
8
10
0
0
8
9
12
15
25
8
11
15
10
13
20
2
2
2
2
8
11
15
8
11
15
2
2
0
0
8
12
24
30
50
0
0
0
0
0
0
12
15
20
0
0
12
15
30
12
15
30
0
0
8
12
CY7C150
7C150 35
Unit
35
ns
25
35
ns
2
2
ns
15
20
ns
0
0
ns
20
25
ns
15
20
ns
0
0
ns
20
25
ns
35
ns
20
ns
30
ns
5
5
ns
5
5
ns
20
ns
20
ns
5
5
ns
0
0
ns
20
25
ns
70
ns
0
0
ns
0
0
ns
0
0
ns
30
ns
0
0
ns
40
ns
40
ns
0
0
ns
20
25
ns
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