Gan Systems GS-EVB-HBDB-IMS Manuale tecnico - Pagina 14
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4.2 Boost Configuration Test (GS-EVB-HBDB-IMS + GS-EVB-IMS3-66508B-GS)
•
Test condition: V
•
Device case temperature 72℃
GS-EVB-HBDB-IMS TM Rev. 220329
650 V Universal Half Bridge Isolated Driver Motherboard for IMS2
= 400V, f
=10kHz, Po=0.8kW, T
IN
sw
Figure 16 Boost configuration test setup schematics
Figure 17 Boost configuration test setup
Please refer to the Evaluation Board/Kit Important Notice on page 19
= 25℃.
AMB
© 2022 GaN Systems Inc.
GS-EVB-HBDB-IMS
& IMS3
Technical Manual
www.gansystems.com
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