Cypress Semiconductor CY62157ESL Scheda tecnica - Pagina 5

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Data Retention Characteristics
Over the Operating Range
Parameter
Description
V
V
for Data Retention
DR
CC
I
Data Retention Current
CCDR
[6]
t
Chip Deselect to Data
CDR
Retention Time
[7]
t
Operation Recovery Time
R
Data Retention Waveform
V
CC
CE or
[8]
BHE.BLE
Notes
6. Tested initially and after any design or process changes that may affect these parameters.
7. Full device operation requires linear V
8. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.
Document #: 001-43141 Rev. **
Conditions
CE > V
– 0.2V,
CC
V
> V
– 0.2V or V
IN
CC
DATA RETENTION MODE
V
CC(min)
t
CDR
> 100 μs or stable at V
ramp from V
to V
CC
DR
CC(min)
V
= 1.5V
CC
< 0.2V
IN
V
= 2.0V
CC
V
> 1.5V
DR
> 100 μs.
CC(min)
CY62157ESL MoBL
[2]
Min
Typ
Max
Unit
1.5
2
5
2
8
0
t
RC
V
CC(min)
t
R
Page 5 of 12
®
V
μA
ns
ns
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