Cypress Semiconductor MoBL CY62128E Scheda tecnica - Pagina 4

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Thermal Resistance
[9]
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
AC Test Loads and Waveform
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Parameter
Description
V
V
for Data Retention
DR
CC
[8]
I
Data Retention Current
CCDR
[9]
t
Chip Deselect to Data
CDR
Retention Time
[10]
t
Operation Recovery
R
Time
Data Retention Waveform
V
CC
CE
Notes
Notes
10. Full device AC operation requires linear V
10. Full device AC operation requires linear V
11. CE is the logical combination of CE
11. CE is the logical combination of CE
Document #: 38-05485 Rev. *F
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
R2
Rise Time = 1 V/ns
Equivalent to:
THEVENIN
OUTPUT
(Over the Operating Range)
V
= V
, CE
> V
CC
DR
1
CC
V
> V
- 0.2V or V
IN
CC
[11]
V
CC(min)
t
CDR
> 100 μs or stable at V
> 100 μs or stable at V
ramp from V
ramp from V
to V
to V
CC
CC
DR
DR
CC(min)
CC(min)
and CE
and CE
. When CE
. When CE
is LOW and CE
is LOW and CE
1
1
2
2
1
1
SOIC
Package
48.67
25.86
ALL INPUT PULSES
3.0V
90%
10%
GND
EQUIVALENT
R
TH
V
Value
1800
990
639
1.77
Conditions
− 0.2V or CE
< 0.2V,
Ind'l/Auto-A
2
< 0.2V
IN
Auto-E
DATA RETENTION MODE
V
> 2.0V
DR
> 100 μs.
> 100 μs.
CC(min)
CC(min)
is HIGH, CE is LOW; when CE
is HIGH, CE is LOW; when CE
is HIGH or CE
is HIGH or CE
2
2
1
1
®
MoBL
CY62128E
STSOP
TSOP
Unit
Package
Package
°C/W
32.56
33.01
°C/W
3.59
3.42
90%
10%
Fall Time = 1 V/ns
Unit
Ω
Ω
Ω
V
[3]
Min
Typ
Max
2
4
30
0
t
RC
V
CC(min)
t
R
is LOW, CE is HIGH.
is LOW, CE is HIGH.
2
2
Page 4 of 12
Unit
V
μA
μA
ns
ns
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