Cypress Semiconductor MoBL CY62157E Scheda tecnica - Pagina 3

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Maximum Ratings

(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied ........................................... –55°C to + 125°C
Supply Voltage to Ground
Potential .......................................................... –0.5V to 6.0V
DC Voltage Applied to Outputs
[6, 7]
in High Z State
........................................... –0.5V to 6.0V

Electrical Characteristics (

Parameter
Description
V
Output HIGH
OH
Voltage
V
Output LOW
OL
Voltage
V
Input HIGH
IH
Voltage
V
Input LOW
IL
Voltage
I
Input Leakage
IX
Current
I
Output Leakage
OZ
Current
I
V
Operating
CC
CC
Supply
Current
I
Automatic CE
SB1
Power-Down
Current —
CMOS Inputs
I
Automatic CE
SB2
Power-Down
Current —
CMOS Inputs
[9]
Capacitance
Parameter
Description
C
Input Capacitance
IN
C
Output Capacitance
OUT
Notes:
6. V
= –2.0V for pulse durations less than 20 ns for I < 30 mA.
IL(min)
7. V
= V
+ 0.75V for pulse durations less than 20 ns.
IH(max)
CC
8. Full device AC operation assumes a 100 µs ramp time from 0 to V
9. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05695 Rev. *C
Over the Operating Range)
Test Conditions
I
= –1 mA
V
= 4.5V
OH
CC
I
= 2.1 mA
V
= 4.5V
OL
CC
V
= 4.5V to 5.5V
CC
V
= 4.5V to 5.5V
CC
GND < V
< V
I
CC
GND < V
< V
, Output Disabled
O
CC
f = f
= 1/t
V
= V
max
RC
CC
CCmax
I
= 0 mA
OUT
f = 1 MHz
CMOS levels
− 0.2V, CE
CE
> V
< 0.2V,
1
CC
2
V
> V
– 0.2V, V
< 0.2V,
IN
CC
IN
f = f
(Address and Data Only),
max
f = 0 (OE, BHE, BLE and WE),
V
= 3.60V
CC
CE
> V
– 0.2V or CE
< 0.2V,
1
CC
2
V
> V
– 0.2V or V
< 0.2V,
IN
CC
IN
f = 0, V
= 3.60V
CC
T
= 25°C, f = 1 MHz, V
A
(min) and 200 µs wait time after V
CC
[6, 7]
DC Input Voltage
........................................–0.5V to 6.0V
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage .......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ................................................... > 200 mA

Operating Range

Device
Range
CY62157E
Industrial
Automotive –40°C to +125°C
45 ns (Industrial)
[4]
Min
Typ
Max
2.4
0.4
2.2
V
+ 0.5
CC
–0.5
0.8
–1
+1
–1
+1
18
25
1.8
3
2
8
2
8
Test Conditions
= V
CC
CC(typ)
stabilization.
CC
CY62157E MoBL
Ambient
[8]
Temperature
V
CC
–40°C to +85°C
4.5V to 5.5V
55 ns (Automotive)
[4]
Min
Typ
Max
Unit
2.4
V
0.4
V
2.2
V
+ 0.5
V
CC
–0.5
0.8
V
µA
–1
+1
µA
–1
+1
18
35
mA
1.8
4
µA
2
30
µA
2
30
Max
Unit
10
pF
10
pF
Page 3 of 12
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