Cypress Semiconductor MoBL CY62157EV30 Scheda tecnica - Pagina 4

Sfoglia online o scarica il pdf Scheda tecnica per Hardware del computer Cypress Semiconductor MoBL CY62157EV30. Cypress Semiconductor MoBL CY62157EV30 15. 8-mbit (512k x 16) static ram

Cypress Semiconductor MoBL CY62157EV30 Scheda tecnica

Maximum Ratings

Exceeding maximum ratings may shorten the battery life of the
device. User guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied ........................................... –55°C to + 125°C
Supply Voltage to Ground
Potential ................................–0.3V to 3.9V (V
DC Voltage Applied to Outputs
[6, 7]
in High-Z State
................–0.3V to 3.9V (V

Electrical Characteristics

Over the Operating Range
Parameter
Description
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Leakage Current
IX
I
Output Leakage Current
OZ
I
V
Operating Supply Current f = f
CC
CC
I
Automatic CE Power Down
SB1
Current — CMOS Inputs
[9]
I
Automatic CE Power Down
SB2
Current — CMOS Inputs
Capacitance
[10]
Parameter
Description
C
Input Capacitance
IN
C
Output Capacitance
OUT
Notes
6. V
= –2.0V for pulse durations less than 20 ns.
IL(min)
7. V
= V
+ 0.75V for pulse durations less than 20 ns.
IH(max)
CC
8. Full device AC operation assumes a 100 µs ramp time from 0 to V
9. Only chip enables (CE
and CE
1
2
inputs can be left floating.
10. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05445 Rev. *E
+ 0.3V)
CCmax
+ 0.3V)
CCmax
I
= –0.1 mA
OH
I
= –1.0 mA, V
OH
I
= 0.1 mA
OL
I
= 2.1mA, V
OL
CC
V
= 2.2V to 2.7V
CC
V
= 2.7V to 3.6V
CC
V
= 2.2V to 2.7V
CC
V
= 2.7V to 3.6V
CC
GND < V
< V
I
CC
GND < V
< V
O
CC
= 1/t
max
RC
f = 1 MHz
− 0.2V, CE
CE
> V
1
CC
V
> V
– 0.2V, V
IN
CC
f = f
(Address and Data Only),
max
f = 0 (OE, BHE, BLE and WE), V
CE
> V
– 0.2V or CE
1
CC
V
> V
– 0.2V or V
IN
CC
T
= 25°C, f = 1 MHz,
A
V
= V
CC
CC(typ)
(min) and 200 µs wait time after V
cc
), byte enables (BHE and BLE) and BYTE (48 TSOP I only) need to be tied to CMOS levels to meet the I
[6, 7]
DC Input Voltage
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage .......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current .................................................... > 200 mA

Operating Range

Device
Range
CY62157EV30LL Ind'l/Auto-A –40°C to +85°C
Test Conditions
> 2.70V
CC
> 2.70V
, Output Disabled
V
= V
CC
CCmax
I
= 0 mA
OUT
CMOS levels
< 0.2V
2
< 0.2V)
IN
= 3.60V
CC
< 0.2V,
2
< 0.2V, f = 0, V
= 3.60V
IN
CC
Test Conditions
stabilization.
CC
CY62157EV30 MoBL
........... –0.3V to 3.9V (V
CC max
Ambient
V
Temperature
2.20V to
3.60V
45 ns (Ind'l/Auto-A)
[2]
Min
Typ
Max
2.0
2.4
0.4
0.4
1.8
V
+ 0.3
CC
2.2
V
+ 0.3
CC
–0.3
0.6
–0.3
0.8
–1
+1
–1
+1
18
25
1.8
3
2
8
2
8
Max
Unit
10
pF
10
pF
/ I
SB2
CCDR
Page 4 of 14
®
+ 0.3V)
[8]
CC
Unit
V
V
V
V
V
V
V
V
µA
µA
mA
µA
µA
spec. Other
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