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コンピュータ・ハードウェア Cypress Semiconductor CY62148EV30のPDF 仕様書をオンラインで閲覧またはダウンロードできます。Cypress Semiconductor CY62148EV30 13 ページ。 Mobl 4-mbit (512k x 8) static ram
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ADDRESS
DATA OUT
PREVIOUS DATA VALID
ADDRESS
CE
OE
HIGH IMPEDANCE
DATA OUT
t
V
PU
CC
SUPPLY
CURRENT
Figure 3. Write Cycle No. 1 (WE Controlled, OE HIGH During Write)
ADDRESS
CE
WE
OE
NOTE 21
DATA IO
Notes
16. Device is continuously selected. OE, CE = V
17. WE is HIGH for read cycles.
18. Address valid before or similar to CE transition LOW.
19. Data IO is high impedance if OE = V
20. If CE goes HIGH simultaneously with WE HIGH, the output remains in high impedance state.
21. During this period, the IOs are in output state. Do not apply input signals.
Document #: 38-05576 Rev. *G
Figure 1. Read Cycle No. 1 (Address Transition Controlled)
t
AA
t
OHA
Figure 2. Read Cycle No. 2 (OE Controlled)
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
50%
t
SCE
t
AW
t
SA
t
HZOE
.
IL
.
IH
t
RC
RC
[17, 18]
DATA VALID
t
WC
t
PWE
t
SD
DATA VALID
®
MoBL
CY62148EV30
[16, 17]
DATA VALID
t
HZOE
t
HZCE
HIGH
IMPEDANCE
t
PD
50%
[19, 20]
t
HA
t
HD
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I
CC
I
SB
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