コンピュータ・ハードウェア Cypress Semiconductor CY62167EV30のPDF 仕様書をオンラインで閲覧またはダウンロードできます。Cypress Semiconductor CY62167EV30 15 ページ。 Mobl 16-mbit (1m x 16 / 2m x 8) static ram
ページを印刷するFeatures
TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM
■
Very High Speed: 45 ns
■
Temperature Ranges
■
Industrial: –40°C to +85°C
❐
Automotive-A: –40°C to +85°C
❐
Wide Voltage Range: 2.20V to 3.60V
■
Ultra Low Standby Power
■
Typical standby current: 1.5 μA
❐
Maximum standby current: 12 μA
❐
Ultra Low Active Power
■
Typical active current: 2.2 mA @ f = 1 MHz
❐
Easy Memory Expansion with CE
■
Automatic Power Down when Deselected
■
CMOS for Optimum Speed and Power
■
Offered in Pb-free 48-Ball VFBGA and 48-Pin TSOP I
■
Packages
Functional Description
The CY62167EV30 is a high performance CMOS static RAM
organized as 1M words by 16 bits or 2M words by 8 bits. This
device features an advanced circuit design that provides an ultra
Logic Block Diagram
Power Down
Circuit
Cypress Semiconductor Corporation
Document #: 38-05446 Rev. *E
16-Mbit (1M x 16 / 2M x 8) Static RAM
, CE
, and OE Features
1
2
DATA IN DRIVERS
A
10
A
9
A
8
A
7
A
1M × 16 / 2M x 8
6
A
RAM Array
5
A
4
A
3
A
2
A
1
A
0
COLUMN DECODER
CE
2
CE
1
BHE
BLE
•
198 Champion Court
CY62167EV30 MoBL
low active current. Ultra low active current is ideal for providing
®
More Battery Life™ (MoBL
) in portable applications such as
cellular telephones. The device also has an automatic power
down feature that reduces power consumption by 99 percent
when addresses are not toggling. Place the device into standby
mode when deselected (CE
HIGH or CE
1
BLE are HIGH). The input and output pins (I/O
are placed in a high impedance state when: the device is
deselected (CE
HIGH or CE
1
HIGH), both Byte High Enable and Byte Low Enable are disabled
(BHE, BLE HIGH), or a write operation is in progress (CE
CE
HIGH and WE LOW).
2
To write to the device, take Chip Enables (CE
HIGH) and Write Enable (WE) input LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
A
). If Byte High Enable (BHE) is LOW, then data from the I/O
19
pins (I/O
through I/O
) is written into the location specified on
8
15
the address pins (A
through A
0
To read from the device, take Chip Enables (CE
HIGH) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins appears
on I/O
to I/O
. If Byte High Enable (BHE) is LOW, then data from
0
7
memory appears on I/O
to I/O
8
page 9
for a complete description of read and write modes.
For best practice recommendations, refer to the Cypress
application note
AN1064, SRAM System
,
•
San Jose
CA 95134-1709
LOW or both BHE and
2
through I/O
0
LOW), outputs are disabled (OE
2
LOW,
1
LOW and CE
1
through I/O
0
through
0
).
19
LOW and CE
1
. See the
"Truth Table" on
15
Guidelines.
IO
–IO
0
7
IO
–IO
8
15
BYTE
BHE
WE
CE
2
CE
1
OE
BLE
•
408-943-2600
Revised March 23, 2009
®
)
15
2
) is
7
2
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