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コンピュータ・ハードウェア Cypress Semiconductor CY7C1297HのPDF 仕様書をオンラインで閲覧またはダウンロードできます。Cypress Semiconductor CY7C1297H 16 ページ。 Cypress 1-mbit (64k x 18) flow-through sync sram specification sheet

Functional Overview

All synchronous inputs pass through input registers controlled
by the rising edge of the clock. Maximum access delay from
the clock rise (t
) is 6.5 ns (133-MHz device).
CDV
The CY7C1297H supports secondary cache in systems
utilizing either a linear or interleaved burst sequence. The
interleaved burst order supports Pentium and i486™
processors. The linear burst sequence is suited for processors
that utilize a linear burst sequence. The burst order is
user-selectable, and is determined by sampling the MODE
input. Accesses can be initiated with either the Processor
Address Strobe (ADSP) or the Controller Address Strobe
(ADSC). Address advancement through the burst sequence is
controlled by the ADV input. A two-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.
Byte Write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BW
Enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Selects (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. ADSP is ignored if CE
is HIGH.
Single Read Accesses
A single read access is initiated when the following conditions
are satisfied at clock rise: (1) CE
asserted active, and (2) ADSP or ADSC is asserted LOW (if
the access is initiated by ADSC, the write inputs must be
deasserted during this first cycle). The address presented to
the address inputs is latched into the address register and the
burst counter/control logic and presented to the memory core.
If the OE input is asserted LOW, the requested data will be
available at the data outputs a maximum to t
rise. ADSP is ignored if CE
1
Single Write Accesses Initiated by ADSP
This access is initiated when the following conditions are
satisfied at clock rise: (1) CE
active, and (2) ADSP is asserted LOW. The addresses
presented are loaded into the address register and the burst
inputs (GW, BWE, and BW
[A:B]
clock cycle. If the Write inputs are asserted active (see Write
Cycle Descriptions table for appropriate states that indicate a
Write) on the next clock rise, the appropriate data will be
latched and written into the device. Byte Writes are allowed.
During byte writes, BW
controls DQ
A
All I/Os are tri-stated during a Byte Write. Since this is a
common I/O device, the asynchronous OE input signal must
be deasserted and the I/Os must be tri-stated prior to the
presentation of data to DQs. As a safety precaution, the data
lines are tri-stated once a Write cycle is detected, regardless
of the state of OE.
Single Write Accesses Initiated by ADSC
This write access is initiated when the following conditions are
satisfied at clock rise: (1) CE
Document #: 38-05669 Rev. *B
) inputs. A Global Write
[A:D]
, CE
, CE
) and an
1
2
3
, CE
, and CE
are all
1
2
3
after clock
CDV
is HIGH.
, CE
, CE
are all asserted
1
2
3
) are ignored during this first
and BW
controls DQ
A
B
, CE
, and CE
are all asserted
1
2
3
active, (2) ADSC is asserted LOW, (3) ADSP is deasserted
HIGH, and (4) the Write input signals (GW, BWE, and BW
indicate a write access. ADSC is ignored if ADSP is active
LOW.
The addresses presented are loaded into the address register
and the burst counter/control logic and delivered to the
memory core. The information presented to DQ
written into the specified address location. Byte Writes are
allowed. During Byte Writes, BW
controls DQ
. All I/Os are tri-stated when a write is detected,
B
even a Byte Write. Since this is a common I/O device, the
asynchronous OE input signal must be deasserted and the
I/Os must be tri-stated prior to the presentation of data to DQs.
As a safety precaution, the data lines are tri-stated once a
Write cycle is detected, regardless of the state of OE.
Burst Sequences
The CY7C1297H provides an on-chip two-bit wraparound burst
counter inside the SRAM. The burst counter is fed by A
and can follow either a linear or interleaved burst order. The
burst order is determined by the state of the MODE input. A
LOW on MODE will select a linear burst sequence. A HIGH on
MODE will select an interleaved burst order. Leaving MODE
unconnected will cause the device to default to a interleaved
burst sequence.
Sleep Mode
1
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation "sleep" mode. Two
clock cycles are required to enter into or exit from this "sleep"
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the "sleep" mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the "sleep" mode. CEs, ADSP, and ADSC must remain
inactive for the duration of t
LOW.
Interleaved Burst Address Table
(MODE = Floating or V
First
Second
Address
Address
A1, A0
A1, A0
00
01
01
00
10
11
11
10
Linear Burst Address Table
(MODE = GND)
.
B
First
Second
Address
Address
A
, A
A
, A
1
0
1
00
01
01
10
10
11
11
00
CY7C1297H
[A:B]
controls DQ
and BW
A
A
after the ZZ input returns
ZZREC
)
DD
Third
Fourth
Address
Address
A1, A0
A1, A0
10
11
11
10
00
01
01
00
Third
Fourth
Address
Address
A
, A
A
, A
0
1
0
1
10
11
11
00
00
01
01
10
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)
[A:B]
will be
B
,
[1:0]
0
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