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コンピュータ・ハードウェア Cypress Semiconductor MoBL CY62128EのPDF 仕様書をオンラインで閲覧またはダウンロードできます。Cypress Semiconductor MoBL CY62128E 12 ページ。 1-mbit (128k x 8) static ram
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ADDRESS
DATA OUT
PREVIOUS DATA VALID
ADDRESS
CE
OE
HIGH IMPEDANCE
DATA OUT
t
V
PU
CC
SUPPLY
CURRENT
ADDRESS
CE
WE
OE
NOTE 21
DATA IO
Notes:
16. The device is continuously selected. OE, CE
17. WE is HIGH for read cycle.
18. Address valid before or similar to CE
19. Data IO is high impedance if OE = V
20. If CE
goes HIGH or CE
goes LOW simultaneously with WE HIGH, the output remains in high impedance state.
1
2
21. During this period, the IOs are in output state and input signals must not be applied.
Document #: 38-05485 Rev. *F
Figure 1. Read Cycle 1 (Address Transition Controlled)
t
AA
t
OHA
Figure 2. Read Cycle No. 2 (OE Controlled)
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
50%
Figure 3. Write Cycle No. 1 (WE Controlled)
t
SCE
t
AW
t
SA
t
HZOE
= V
, CE
= V
.
1
IL
2
IH
transition LOW and CE
transition HIGH.
1
2
.
IH
[16, 17]
t
RC
RC
[11, 17, 18
DATA VALID
[11, 15, 19, 20]
t
WC
t
PWE
t
SD
DATA VALID
®
MoBL
CY62128E
DATA VALID
]
t
HZOE
t
HZCE
HIGH
IMPEDANCE
t
PD
50%
t
HA
t
HD
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I
CC
I
SB
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