Cypress Semiconductor CY62146EV30 사양 시트 - 페이지 5

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Cypress Semiconductor CY62146EV30 사양 시트

Switching Characteristics

Parameter
Read Cycle
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
DBE
t
LZBE
t
HZBE
[15]
Write Cycle
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
BW
t
SD
t
HD
t
HZWE
t
LZWE
Notes:
11. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns (1V/ns) or less, timing reference levels of V
pulse levels of 0 to V
, and output loading of the specified I
CC(typ)
12. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. Please see application note AN13842 for further
clarification.
13. At any given temperature and voltage condition, t
given device.
14. t
, t
, t
, and t
transitions are measured when the outputs enter a high impedence state.
HZOE
HZCE
HZBE
HZWE
15. The internal write time of the memory is defined by the overlap of WE, CE = V
these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.
Document #: 38-05567 Rev. *C
(Over the Operating Range)
Description
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
[13]
OE LOW to Low-Z
[13, 14]
OE HIGH to High-Z
[13]
CE LOW to Low-Z
[13, 14]
CE HIGH to High-Z
CE LOW to Power Up
CE HIGH to Power Down
BLE / BHE LOW to Data Valid
[13]
BLE / BHE LOW to Low-Z
BLE / BHE HIGH to High-Z
Write Cycle Time
CE LOW to Write End
Address Setup to Write End
Address Hold from Write End
Address Setup to Write Start
WE Pulse Width
BLE / BHE LOW to Write End
Data Setup to Write End
Data Hold from Write End
[13, 14]
WE LOW to High-Z
[13]
WE HIGH to Low-Z
/I
OL
OH
is less than t
HZCE
LZCE
[11, 12]
[13, 14]
as shown in the
"AC Test Loads and Waveforms" on page
, t
is less than t
, t
is less than t
HZBE
LZBE
HZOE
, BHE and/or BLE = V
. All signals must be ACTIVE to initiate a write and any of
IL
IL
CY62146EV30 MoBL
45 ns
Min
Max
45
45
10
45
22
5
18
10
18
0
45
22
5
18
45
35
35
0
0
35
35
25
0
18
10
CC(typ)
4.
, and t
is less than t
LZOE
HZWE
Page 5 of 12
®
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
/2, input
for any
LZWE