Cypress Semiconductor CY62147DV18 사양 시트 - 페이지 11
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페이지 인쇄Document History Page
Document Title:CY62147DV18 MoBL2™ 4-Mb (256K x 16) Static RAM
Document Number: 38-05343
Issue
REV.
ECN NO.
**
127482
06/17/03
*A
131009
11/26/03
*B
229908
See ECN
Document #: 38-05343 Rev. *B
Orig. of
Date
Change
HRT
New Data Sheet
CBD
Changed From Advance to Preliminary
AJU
Changed From Preliminary to Final
Added 70 ns speed bin
Changed Vcc MAX spec from 2.20V to 2.25V
Modified V
Changed I
Changed I
and 10 mA to 8mA (LL bin)
Changed I
and 12mA to 10 mA (LL bin)
With modified V
to 18 uA (L bin) and 10 uA to 12 uA (LL bin)
Modified input and output capacitance values
Removed footnote #9 from earlier rev
Removed MAX value for V
Modified t
Added Pb-free ordering information
Description of Change
spec on footnote #6 from V
IH
TYP values from 8 mA to 6 mA
CC
MAX values at Vcc (max) = 1.95V from 15 mA to 12 mA (L bin)
CC
MAX values at Vcc (max) = 2.25V from 18 mA to 15 mA (L bin)
CC
spec, changed I
cc MAX
SB1
DR
from 20 ns to 16 ns
HZOE
CY62147DV18
MoBL2™
+ 0.5V to V
+ 0.75V
CC (MAX)
CC (MAX)
and I
MAX values from 15 uA
SB2
Page 11 of 11
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