Cypress Semiconductor CY62158E 사양 시트 - 페이지 4
{카테고리_이름} Cypress Semiconductor CY62158E에 대한 사양 시트을 온라인으로 검색하거나 PDF를 다운로드하세요. Cypress Semiconductor CY62158E 11 페이지. Mobl 8-mbit (1m x 8) static ram
페이지 인쇄R1
V
CC
OUTPUT
100 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Over the Operating Range
Parameter
Description
V
V
for Data Retention
DR
CC
[6]
I
Data Retention Current
CCDR
[7]
t
Chip Deselect to Data
CDR
Retention Time
[8]
t
Operation Recovery Time
R
V
CC
CE
1
or
CE
2
Notes
7. Tested initially and after any design or process changes that may affect these parameters.
8. Full device operation requires linear V
Document #: 38-05684 Rev. *D
Figure 2. AC Test Loads and Waveforms
R2
Rise Time = 1 V/ns
Equivalent to: THÉVENIN EQUIVALENT
OUTPUT
1838
994
645
1.75
Conditions
V
= V
CC
DR
− 0.2V, CE
CE
> V
1
CC
− 0.2V or V
V
> V
IN
CC
Figure 3. Data Retention Waveform
DATA RETENTION MODE
V
(min)
CC
t
CDR
(min) > 100 μs or stable at V
ramp from V
to V
CC
DR
CC
ALL INPUT PULSES
3V
90%
10%
GND
R
TH
V
5.0V
Ω
Ω
Ω
V
< 0.2V,
2
< 0.2V
IN
> 2.0 V
V
DR
(min) > 100 μs.
CC
CY62158E MoBL
90%
10%
Fall Time = 1 V/ns
Unit
[2]
Min
Typ
Max
2
8
0
t
RC
V
(min)
CC
t
R
Page 4 of 10
®
Unit
V
μA
ns
ns
[+] Feedback