Cypress Semiconductor CY62167EV30 사양 시트 - 페이지 3
{카테고리_이름} Cypress Semiconductor CY62167EV30에 대한 사양 시트을 온라인으로 검색하거나 PDF를 다운로드하세요. Cypress Semiconductor CY62167EV30 15 페이지. Mobl 16-mbit (1m x 16 / 2m x 8) static ram
페이지 인쇄Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied ........................................... –55°C to + 125°C
Supply Voltage to Ground
Potential .................................–0.3V to 3.9V V
DC Voltage Applied to Outputs
[6, 7]
in High Z State
..................–0.3V to 3.9V V
Electrical Characteristics
Over the Operating Range
Parameter
Description
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Leakage Current
IX
I
Output Leakage Current
OZ
I
V
Operating Supply
CC
CC
Current
I
Automatic CE Power Down
SB1
Current—CMOS Inputs
[10]
I
Automatic CE Power Down
SB2
Current—CMOS Inputs
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
C
Input Capacitance
IN
C
Output Capacitance
OUT
Notes
6. V
(min) = –2.0V for pulse durations less than 20 ns.
IL
7. V
(max) = V
+ 0.75V for pulse durations less than 20 ns.
IH
CC
8. Full Device AC operation assumes a 100 μs ramp time from 0 to V
9. Under DC conditions the device meets a V
applicable to TSOP I package only.
10. Only chip enables (CE
and CE
1
2
Document #: 38-05446 Rev. *E
+ 0.3V
CC(max)
+ 0.3V
CC(max)
2.2 < V
CC
2.7 < V
CC
2.2 < V
CC
2.7 < V
CC
2.2 < V
CC
2.7 < V
CC
2.2 < V
CC
2.7 < V
CC
GND < V
I
GND < V
O
f = f
= 1/t
MAX
f = 1 MHz
CE
> V
1
CC
V
> V
IN
CC
f = f
(Address and Data Only),
MAX
f = 0 (OE, WE, BHE and BLE), V
CE
> V
1
CC
V
> V
IN
CC
f = 0, V
CC
T
= 25°C, f = 1 MHz,
A
V
= V
CC
CC(typ)
(min) and 200 μs wait time after V
CC
of 0.8V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.7V. This is
IL
), byte enables (BHE and BLE) and BYTE must be tied to CMOS levels to meet the I
[6, 7]
DC Input Voltage
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
Latch up Current...................................................... >200 mA
Operating Range
Device
CY62167EV30LL
Test Conditions
< 2.7
I
= –0.1 mA
OH
< 3.6
I
= –1.0 mA
OH
< 2.7
I
= 0.1 mA
OL
< 3.6
I
= 2.1mA
OL
< 2.7
< 3.6
< 2.7
< 3.6
For VFBGA package
For TSOP I package
< V
CC
< V
, Output Disabled
CC
V
= V
(max)
RC
CC
CC
I
= 0 mA
OUT
CMOS levels
− 0.2V or CE
< 0.2V
2
− 0.2V, V
< 0.2V,
IN
= 3.60V
CC
− 0.2V or CE
< 0.2V,
2
− 0.2V or V
< 0.2V,
IN
= 3.60V
Test Conditions
stabilization.
CC
CY62167EV30 MoBL
...........–0.3V to 3.9V (V
(max) + 0.3V
CC
Ambient
Range
Temperature
Industrial/
–40°C to +85°C 2.2V to 3.6V
Auto-A
45 ns (Industrial/Auto-A)
[5]
Min
Typ
Max
2.0
2.4
0.4
0.4
1.8
V
+ 0.3V
CC
2.2
V
+ 0.3V
CC
–0.3
0.6
–0.3
0.8
–0.3
0.7
–1
+1
–1
+1
25
30
2.2
4.0
1.5
12
1.5
12
Max
10
10
/ I
spec. Other inputs can be left floating
SB2
CCDR
®
[8]
V
CC
Unit
V
V
V
V
V
V
V
V
[9]
V
μA
μA
mA
mA
μA
μA
Unit
pF
pF
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