Cypress Semiconductor CY7C1006D 사양 시트 - 페이지 4
{카테고리_이름} Cypress Semiconductor CY7C1006D에 대한 사양 시트을 온라인으로 검색하거나 PDF를 다운로드하세요. Cypress Semiconductor CY7C1006D 12 페이지. 1-mbit (256k x 4) static ram
페이지 인쇄Capacitance
[4]
Parameter
Description
C
: Addresses
Input Capacitance
IN
C
: Controls
IN
C
Output Capacitance
OUT
Thermal Resistance
[4]
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
AC Test Loads and Waveforms
Z = 50Ω
OUTPUT
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
Notes
4. Tested initially and after any design or process changes that may affect these parameters.
5. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load
shown in Figure (c).
Document #: 38-05459 Rev. *E
Test Conditions
T
= 25°C, f = 1 MHz, V
A
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
[5]
50 Ω
30 pF*
1.5V
(a)
High-Z characteristics:
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(c)
= 5.0V
CC
300-Mil
Wide SOJ
59.16
40.84
ALL INPUT PULSES
3.0V
90%
10%
GND
≤ 3 ns
Rise Time:
(b)
R1 480Ω
R2
255Ω
CY7C106D
CY7C1006D
Max
Unit
7
pF
10
pF
10
pF
400-Mil
Unit
Wide SOJ
58.76
°C/W
40.54
°C/W
90%
10%
≤ 3 ns
Fall Time:
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