Cypress Semiconductor CY7C1019BN 사양 시트 - 페이지 4
{카테고리_이름} Cypress Semiconductor CY7C1019BN에 대한 사양 시트을 온라인으로 검색하거나 PDF를 다운로드하세요. Cypress Semiconductor CY7C1019BN 8 페이지. 128k x 8 static ram
페이지 인쇄Data Retention Characteristics
Parameter
V
V
for Data Retention
DR
CC
I
Data Retention Current
CCDR
[3]
t
Chip Deselect to Data Retention Time
CDR
t
Operation Recovery Time
R
Data Retention Waveform
V
CC
CE
Switching Waveforms
[9, 10]
Read Cycle No. 1
ADDRESS
DATA OUT
PREVIOUS DATA VALID
Read Cycle No. 2 (OE Controlled)
ADDRESS
CE
OE
HIGH IMPEDANCE
DATA OUT
t
V
PU
CC
SUPPLY
CURRENT
Notes:
9. Device is continuously selected. OE, CE = V
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CE transition LOW.
Document #: 001-06425 Rev. **
Over the Operating Range (L Version Only)
Description
3.0V
t
CDR
t
AA
t
OHA
[10, 11]
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
50%
.
IL
Conditions
No input may exceed V
+ 0.5V
CC
V
= V
= 2.0V,
CC
DR
CE > V
– 0.3V,
CC
V
> V
– 0.3V or V
< 0.3V
IN
CC
IN
DATA RETENTION MODE
V
> 2V
DR
t
RC
DATA VALID
CY7C1019BN
Min.
Max.
Unit
2.0
V
µA
300
0
ns
µs
200
3.0V
t
R
DATA VALID
t
HZOE
t
HZCE
HIGH
IMPEDANCE
t
PD
ICC
50%
ISB
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