Cypress Semiconductor CY7C199 사양 시트 - 페이지 3

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Cypress Semiconductor CY7C199 사양 시트
Electrical Characteristics
Parameter
Description
V
Output HIGH
OH
Voltage
V
Output LOW
OL
Voltage
V
Input HIGH
IH
Voltage
V
Input LOW
IL
Voltage
I
Input Load
IX
Current
I
Output Leakage
OZ
Current
I
V
Operating
CC
CC
Supply Current
I
Automatic CE
SB1
Power-Down
Current—
TTL Inputs
I
Automatic CE
SB2
Power-Down
Current—
CMOS Inputs
]
[4]
Capacitance
Parameter
C
IN
C
OUT
Note:
4.
Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05160 Rev. **
Over the Operating Range
Test Conditions
V
= Min., I
=–4.0 mA
CC
OH
V
= Min., I
=8.0 mA
CC
OL
GND < V
< V
I
CC
GND < V
< V
,
I
CC
Output Disabled
V
= Max.,
Com'l
CC
I
= 0 mA,
OUT
L
f = f
= 1/t
MAX
RC
Mil
Max. V
, CE > V
,
Com'l
CC
IH
V
> V
IN
IH
L
or V
< V
, f = f
IN
IL
MAX
Max. V
,
Com'l
CC
CE > V
– 0.3V
CC
L
V
> V
– 0.3V or
IN
CC
V
< 0.3V, f=0
Mil
IN
Description
Input Capacitance
Output Capacitance
[3]
(continued)
7C199-20
7C199-25
Min.
Max.
Min.
Max.
2.4
2.4
0.4
0.4
2.2
V
2.2
V
CC
CC
+0.3V
+0.3V
–0.5
0.8
-0.5
0.8
–5
+5
–5
+5
–5
+5
–5
+5
150
150
90
80
170
150
30
30
5
5
10
10
0.05
0.05
15
15
Test Conditions
T
= 25 C, f = 1 MHz,
A
V
= 5.0V
CC
CY7C199
7C199-35
7C199-45
Min.
Max.
Min.
Max.
2.4
2.4
0.4
0.4
2.2
V
2.2
V
CC
CC
+0.3V
+0.3V
-0.5
0.8
-0.5
0.8
–5
+5
–5
+5
–5
+5
–5
+5
140
140
70
70
150
150
25
25
5
5
10
10
0.05
0.05
15
15
Max.
Unit
8
8
Page 3 of 16
Unit
V
V
V
V
A
A
mA
mA
mA
mA
mA
mA
A
mA
pF
pF