Cypress Semiconductor MoBL CY62126EV30 사양 시트 - 페이지 6
{카테고리_이름} Cypress Semiconductor MoBL CY62126EV30에 대한 사양 시트을 온라인으로 검색하거나 PDF를 다운로드하세요. Cypress Semiconductor MoBL CY62126EV30 14 페이지. 1-mbit (64k x 16) static ram
페이지 인쇄Switching Waveforms
ADDRESS
PREVIOUS DATA VALID
DATA OUT
ADDRESS
CE
OE
BHE/BLE
HIGH IMPEDANCE
DATA OUT
t
PU
V
CC
SUPPLY
CURRENT
Notes
15. The device is continuously selected. OE, CE = V
16. WE is HIGH for read cycle.
17. Address valid before or similar to CE and BHE, BLE transition LOW.
Document #: 38-05486 Rev. *E
Figure 5. Read Cycle No. 1(Address transition controlled)
t
AA
t
OHA
Figure 6. Read Cycle No. 2 (OE controlled)
t
RC
t
ACE
t
DOE
t
LZOE
t
DBE
t
LZBE
t
LZCE
50%
, BHE, BLE, or both = V
IL
[15, 16]
t
RC
[16, 17]
DATA VALID
.
IL
®
MoBL
, CY62126EV30
DATA VALID
t
PD
t
HZCE
t
HZOE
t
HZBE
HIGH
IMPEDANCE
I
CC
50%
I
SB
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