Cypress Semiconductor MoBL CY62148BN 사양 시트 - 페이지 5
{카테고리_이름} Cypress Semiconductor MoBL CY62148BN에 대한 사양 시트을 온라인으로 검색하거나 PDF를 다운로드하세요. Cypress Semiconductor MoBL CY62148BN 10 페이지. 4-mbit (512k x 8) static ram
페이지 인쇄Data Retention Characteristics
Parameter
V
V
for Data Retention
DR
CC
I
Data Retention Current
CCDR
[4]
t
Chip Deselect to Data Retention Time
CDR
[9]
t
Operation Recovery Time
R
Data Retention Waveform
V
CC
CE
Switching Waveforms
[10, 11]
Read Cycle No.1
ADDRESS
DATA OUT
Read Cycle No. 2 (OE Controlled)
ADDRESS
CE
OE
HIGH IMPEDANCE
DATA OUT
t
V
CC
SUPPLY
CURRENT
Notes:
9. Full Device operation requires linear V
10. Device is continuously selected. OE, CE = V
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE transition LOW.
Document #: 001-06517 Rev. *A
(Over the Operating Range)
Description
Com'l LL
Ind'l
LL
3.0V
t
CDR
t
AA
t
OHA
PREVIOUS DATA VALID
[11, 12]
t
t
ACE
t
DOE
t
LZOE
t
LZCE
PU
50%
ramp from V
to V
> 100 ms or stable at V
CC
DR
CC(min)
.
IL
Conditions
No input may exceed
V
+ 0.3V
CC
V
= V
= 3.0V
CC
DR
CE > V
– 0.3V
CC
V
> V
– 0.3V or
IN
CC
V
< 0.3V
IN
DATA RETENTION MODE
V
> 2V
DR
t
RC
RC
DATA VALID
> 100 ms.
cc(min)
CY62148BN MoBL
[1]
Min.
Typ.
Max.
2.0
20
20
0
t
RC
3.0V
t
R
DATA VALID
t
HZOE
t
HZCE
HIGH
IMPEDANCE
t
PD
50%
Page 5 of 10
®
Unit
V
µA
µA
ns
ns
I
SB
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