Cypress Semiconductor STK14C88-3 사양 시트 - 페이지 5
{카테고리_이름} Cypress Semiconductor STK14C88-3에 대한 사양 시트을 온라인으로 검색하거나 PDF를 다운로드하세요. Cypress Semiconductor STK14C88-3 18 페이지. 256 kbit (32k x 8) autostore nvsram
페이지 인쇄Software RECALL
Data is transferred from the nonvolatile memory to the SRAM by
a software address sequence. A software RECALL cycle is
initiated with a sequence of READ operations in a manner similar
to the software STORE initiation. To initiate the RECALL cycle,
the following sequence of CE controlled READ operations is
performed:
1. Read address 0x0E38, Valid READ
2. Read address 0x31C7, Valid READ
3. Read address 0x03E0, Valid READ
4. Read address 0x3C1F, Valid READ
5. Read address 0x303F, Valid READ
6. Read address 0x0C63, Initiate RECALL cycle
Internally, RECALL is a two step procedure. First, the SRAM data
is cleared, and then the nonvolatile information is transferred into
the SRAM cells. After the t
RECALL
again ready for READ and WRITE operations. The RECALL
operation does not alter the data in the nonvolatile elements. The
nonvolatile data can be recalled an unlimited number of times.
Preventing STORE
The STORE function can be disabled on the fly by holding HSB
high with a driver capable of sourcing 30 mA at a V
2.2V, because it has to overpower the internal pull down device.
This device drives HSB LOW for 20 μs at the onset of a STORE.
When the STK14C88-3 is connected for AutoStore operation
(system V
connected to V
CC
CC
and V
crosses V
on the way down, the STK14C88-3
CC
SWITCH
attempts to pull HSB LOW. If HSB does not actually get below
V
, the part stops trying to pull HSB LOW and aborts the STORE
IL
attempt.
Hardware Protect
The STK14C88-3 offers hardware protection against inadvertent
STORE operation and SRAM WRITEs during low voltage condi-
tions. When V
<V
CAP
SWITCH
operations and SRAM WRITEs are inhibited.
Noise Considerations
The STK14C88-3 is a high speed memory. It must have a high
frequency bypass capacitor of approximately 0.1 µF connected
between V
and V
using leads and traces that are as short
CC
SS,
as possible. As with all high speed CMOS ICs, careful routing of
power, ground, and signals reduce circuit noise.
Document Number: 001-50592 Rev. **
cycle time, the SRAM is once
of at least
OH
and a 68 μF capacitor on V
, all externally initiated STORE
Low Average Active Power
CMOS technology provides the STK14C88-3 the benefit of
drawing significantly less current when it is cycled at times longer
than 50 ns.
Figure 4
I
and READ or WRITE cycle time. Worst case current
CC
consumption is shown for both CMOS and TTL input levels
(commercial temperature range, VCC = 3.6V, 100% duty cycle
on chip enable). Only standby current is drawn when the chip is
disabled. The overall average current drawn by the STK14C88-3
depends on the following items:
1. The duty cycle of chip enable
2. The overall cycle rate for accesses
3. The ratio of READs to WRITEs
4. CMOS versus TTL input levels
5. The operating temperature
6. The V
level
CC
7. IO loading
Figure 4. Current Versus Cycle Time (READ)
)
CAP
Figure 5. Current Versus Cycle Time (WRITE)
STK14C88-3
and
Figure 5
show the relationship between
Page 5 of 17
[+] Feedback