Cypress Semiconductor CY7C1218H Specification Sheet - Page 7

Browse online or download pdf Specification Sheet for Computer Hardware Cypress Semiconductor CY7C1218H. Cypress Semiconductor CY7C1218H 16 pages. Cypress 1-mbit (32k x36) pipelined sync sram specification sheet

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Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied............................................ –55°C to + 125°C
Supply Voltage on V
Relative to GND....... –0.5V to + 4.6V
DD
Supply Voltage on V
Relative to GND ..... –0.5V to + V
DDQ
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
Electrical Characteristics
Parameter
Description
V
Power Supply Voltage
DD
V
I/O Supply Voltage
DDQ
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Leakage Current
X
except ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
I
OZ
I
V
Operating Supply
DD
DD
Current
I
Automatic CS
SB1
Power-down
Current—TTL Inputs
I
Automatic CS
SB2
Power-down
Current—CMOS Inputs
I
Automatic CS
SB3
Power-down
Current—CMOS Inputs
I
Automatic CS
SB4
Power-down
Current—TTL Inputs
Notes:
8. Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
IH
DD
9. T
: Assumes a linear ramp from 0V to V
Power-up
Document #: 38-05667 Rev. *B
DD
+ 0.5V
DDQ
Over the Operating Range
Test Conditions
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O, I
= –4.0 mA
OH
for 2.5V I/O, I
= –1.0 mA
OH
for 3.3V I/O, I
= 8.0 mA
OL
for 2.5V I/O, I
= 1.0 mA
OL
[8]
for 3.3V I/O
for 2.5V I/O
[8]
for 3.3V I/O
for 2.5V I/O
GND ≤ V
≤ V
I
DDQ
SS
Input = V
DD
Input = V
SS
Input = V
DD
≤ V
Output Disabled
I
DDQ,
V
= Max., I
= 0 mA,
DD
OUT
f = f
= 1/t
MAX
CYC
V
= Max, Device Deselected,
DD
≥ V
≤ V
V
or V
IN
IH
IN
IL
f = f
= 1/t
MAX
CYC
V
= Max, Device Deselected,
DD
≤ 0.3V or V
V
> V
IN
IN
DDQ
f = 0
V
= Max, Device Deselected,
DD
≤ 0.3V or V
or V
> V
IN
IN
DDQ
f = f
= 1/t
MAX
CYC
V
= Max, Device Deselected,
DD
≥ V
≤ V
V
or V
, f = 0
IN
IH
IN
IL
/2), undershoot: V
CYC
(min.) within 200 ms. During this time V
DD
DC Input Voltage ................................... –0.5V to V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Ambient
Range
Temperature
Commercial 0°C to +70°C
Industrial
–40°C to +85°C
[8, 9]
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
All speeds
– 0.3V,
6-ns cycle, 166 MHz
– 0.3V
7.5-ns cycle, 133 MHz
All speeds
(AC) > –2V (Pulse width less than t
IL
< V
and V
< V
IH
DD
DDQ
CY7C1218H
DD
V
V
DD
DDQ
3.3V –5%/+10%
2.5V –5%
to V
Min.
Max.
3.135
3.6
3.135
V
DD
2.375
2.625
2.4
2.0
0.4
0.4
2.0
V
+ 0.3V
DD
1.7
V
+ 0.3V
DD
–0.3
0.8
–0.3
0.7
–5
5
–30
5
–5
30
–5
5
240
225
100
90
40
85
75
45
/2).
CYC
.
DD
Page 7 of 16
+ 0.5V
DD
Unit
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
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