Cypress Semiconductor CY7C1329H Specification Sheet - Page 8

Browse online or download pdf Specification Sheet for Computer Hardware Cypress Semiconductor CY7C1329H. Cypress Semiconductor CY7C1329H 17 pages. 2-mbit (64k x 32) pipelined sync sram

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Maximum Ratings

(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
Relative to GND ....... –0.5V to +4.6V
DD
Supply Voltage on V
Relative to GND ...... –0.5V to +V
DDQ
DC Voltage Applied to Outputs
in Tri-State............................................–0.5V to V

Electrical Characteristics

Parameter
Description
V
Power Supply Voltage
DD
V
I/O Supply Voltage
DDQ
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Leakage Current
X
except ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
I
OZ
I
V
Operating Supply
DD
DD
Current
I
Automatic CS
SB1
Power-down
Current—TTL Inputs
I
Automatic CS
SB2
Power-down
Current—CMOS Inputs
I
Automatic CS
SB3
Power-down
Current—CMOS Inputs
I
Automatic CS
SB4
Power-down
Current—TTL Inputs
Notes:
8. Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
IH
DD
9. T
: Assumes a linear ramp from 0v to V
Power-up
10. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05673 Rev. *B
DD
+ 0.5V
DDQ
[8, 9]
Over the Operating Range
Test Conditions
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O, I
= –4.0 mA
OH
for 2.5V I/O, I
= –1.0 mA
OH
for 3.3V I/O, I
= 8.0 mA
OL
for 2.5V I/O, I
= 1.0 mA
OL
[8]
for 3.3V I/O
for 2.5V I/O
[8]
for 3.3V I/O
for 2.5V I/O
GND ≤ V
≤ V
I
DDQ
SS
Input = V
DD
Input = V
SS
Input = V
DD
≤ V
Output Disabled
I
DDQ,
V
= Max., I
= 0 mA,
DD
OUT
f = f
= 1/t
MAX
CYC
V
= Max, Device
DD
≥ V
Deselected, V
or
IN
IH
≤ V
V
f = f
= 1/t
IN
IL,
MAX
CYC
V
= Max, Device
DD
≤ 0.3V or
Deselected, V
IN
V
> V
– 0.3V, f = 0
IN
DDQ
V
= Max, Device
DD
≤ 0.3V
Deselected, or V
IN
or V
> V
– 0.3V,
IN
DDQ
f = f
= 1/t
MAX
CYC
V
= Max, Device
DD
≥ V
Deselected, V
or
IN
IH
≤ V
V
, f = 0
IN
IL
/2), undershoot: V
CYC
(min.) within 200 ms. During this time V
DD
DC Input Voltage ................................... –0.5V to V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ................................................... > 200 mA

Operating Range

Ambient
Range
Temperature
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
Min.
3.135
3.135
2.375
2.4
2.0
2.0
1.7
–0.3
–0.3
–30
6-ns cycle,166 MHz
7.5-ns cycle,133 MHz
6-ns cycle, 166 MHz
7.5-ns cycle,133 MHz
All speeds
6-ns cycle, 166 MHz
7.5-ns cycle,133MHz
All speeds
(AC) > –2V (Pulse width less than t
IL
CYC
< V
and V
< V
.
IH
DD
DDQ
DD
CY7C1329H
+ 0.5V
DD
V
V
DD
DDQ
3.3V
2.5V –5%
–5%/+10%
to V
DD
Max.
Unit
3.6
V
V
V
DD
2.625
V
V
V
V
V
0.4
V
0.4
V
V
+ 0.3V
V
DD
V
+ 0.3V
V
DD
0.8
V
0.7
V
µA
–5
5
µA
µA
5
µA
–5
µA
30
µA
–5
5
240
mA
225
mA
100
mA
90
mA
40
mA
85
mA
75
mA
45
mA
/2).
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