Cypress Semiconductor CY7C1353G Specification Sheet - Page 7

Browse online or download pdf Specification Sheet for Computer Hardware Cypress Semiconductor CY7C1353G. Cypress Semiconductor CY7C1353G 14 pages. Cypress 4-mbit (256k x 18) flow-through sram with nobl architecture specification sheet

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Maximum Ratings

Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
Relative to GND........ –0.5V to +4.6V
DD
Supply Voltage on V
Relative to GND ...... –0.5V to +V
DDQ
DC Voltage Applied to Outputs
in tri-state ............................................ –0.5V to V

Electrical Characteristics

Parameter
Description
V
Power Supply Voltage
DD
V
IO Supply Voltage
DDQ
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
Input HIGH Voltage
V
Input LOW Voltage
IL
Input LOW Voltage
I
Input Leakage Current
X
except ZZ and MODE
Input Current of MODE
Input Current of ZZ
I
Output Leakage Current
OZ
I
V
Operating Supply
DD
DD
Current
I
Automatic CE Power down
SB1
Current—TTL Inputs
I
Automatic CE Power down
SB2
Current—CMOS Inputs
I
Automatic CE Power down
SB3
Current—CMOS Inputs
I
Automatic CE Power down
SB4
Current—TTL Inputs
Notes:
10. Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
IH
DD
11. T
: Assumes a linear ramp from 0V to V
Power-up
Document #: 38-05515 Rev. *E
DD
+ 0.5V
DDQ
[10,11]
Over the Operating Range
Test Conditions
for 3.3V IO, I
= –4.0 mA
OH
for 2.5V IO, I
= –1.0 mA
OH
for 3.3V IO, I
= 8.0 mA
OH
for 2.5V IO, I
= 1.0 mA
OH
for 3.3V IO
for 2.5V IO
[10]
for 3.3V IO
[10]
for 2.5V IO
GND ≤ V
≤ V
I
DDQ
Input = V
SS
Input = V
DD
Input = V
SS
Input = V
DD
GND ≤ V
≤ V
, Output Disabled
I
DDQ
V
= Max., I
= 0 mA,
DD
OUT
f = f
= 1/t
MAX
CYC
V
= Max, Device Deselected,
DD
≥ V
≤ V
V
or V
IN
IH
IN
inputs switching
V
= Max, Device Deselected,
DD
≥ V
V
– 0.3V or V
IN
DD
f = 0, inputs static
V
= Max, Device Deselected,
DD
≥ V
V
– 0.3V or V
IN
DDQ
f = f
, inputs switching
MAX
V
= Max, Device Deselected,
DD
≥ V
V
– 0.3V or V
IN
DD
f = 0, inputs static
/2), undershoot: V
CYC
(min.) within 200 ms. During this time V
DD
DC Input Voltage ................................... –0.5V to V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current.................................................... > 200 mA

Operating Range

Ambient
Range
Temperature (T
Commercial
0°C to +70°C
−40°C to +85°C
Industrial
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
7.5-ns cycle, 133 MHz
, f = f
,
IL
MAX
10-ns cycle, 100 MHz
All speeds
≤ 0.3V,
IN
7.5-ns cycle, 133 MHz
≤ 0.3V,
IN
10-ns cycle, 100 MHz
All speeds
≤ 0.3V,
IN
(AC)> –2V (Pulse width less than t
IL
< V
and V
< V
IH
DD
DDQ
DD
CY7C1353G
+ 0.5V
DD
)
V
V
A
DD
DDQ
3.3V – 5%/+10% 2.5V – 5%
to V
Min
Max
3.135
3.6
2.375
V
DD
2.4
2.0
0.4
0.4
2.0
V
+ 0.3V
DD
1.7
V
+ 0.3V
DD
–0.3
0.8
–0.3
0.7
−5
5
–30
5
–5
30
–5
5
225
205
90
80
40
75
65
45
/2).
CYC
.
Page 7 of 13
DD
Unit
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
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