Cypress Semiconductor CY7C1364C Specification Sheet - Page 9

Browse online or download pdf Specification Sheet for Computer Hardware Cypress Semiconductor CY7C1364C. Cypress Semiconductor CY7C1364C 19 pages. 9-mbit (256k x 32) pipelined sync sram

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Maximum Ratings

(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage on V
Relative to GND ........–0.5V to +4.6V
DD
Supply Voltage on V
Relative to GND...... –0.5V to +V
DDQ
DC Voltage Applied to Outputs
in tri-state.............................................–0.5V to V

Electrical Characteristics

Parameter
Description
V
Power Supply Voltage
DD
V
I/O Supply Voltage
DDQ
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Leakage Current
X
except ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
I
OZ
I
V
Operating Supply
DD
DD
Current
I
Automatic CE
SB1
Power-down
Current—TTL Inputs
I
Automatic CE
SB2
Power-down
Current—CMOS Inputs
I
Automatic CE
SB3
Power-down
Current—CMOS Inputs
I
Automatic CE
SB4
Power-down
Current—TTL Inputs
Notes:
9. Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
IH
DD
10. T
: Assumes a linear ramp from 0Vv to V
Power-up
Document #: 38-05689 Rev. *E
DD
+ 0.5V
DDQ
[9, 10]
Over the Operating Range
Test Conditions
for 3.3 V I/O
for 2.5V I/O
for 3.3 V I/O, I
= –4.0 mA
OH
for 2.5V I/O, I
= –1.0 mA
OH
for 3.3 V I/O, I
= 8.0 mA
OL
for 2.5V I/O, I
= 1.0 mA
OL
[9]
for 3.3 V I/O
for 2.5V I/O
[9]
for 3.3 V I/O
for 2.5V I/O
GND ≤ V
≤ V
I
DDQ
SS
Input = V
DD
Input = V
SS
Input = V
DD
≤ V
Output Disabled
I
DDQ,
V
= Max., I
= 0 mA,
DD
OUT
f = f
= 1/t
MAX
CYC
V
= Max., Device Deselected,
DD
≥ V
≤ V
V
or V
,
IN
IH
IN
IL
f = f
= 1/t
MAX
CYC
V
= Max., Device Deselected,
DD
≤ 0.3V or V
V
> V
IN
IN
DDQ
f = 0
V
= Max., Device Deselected,
DD
≤ 0.3V or V
or V
> V
IN
IN
DDQ
f = f
= 1/t
MAX
CYC
V
= Max., Device Deselected,
DD
≥ V
≤ V
V
or V
,
IN
IH
IN
IL
f = 0
/2), undershoot: V
CYC
(min.) within 200 ms. During this time V
DD
DC Input Voltage ................................... –0.5V to V
Current into Outputs (LOW) .........................................20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ..................................................... >200 mA

Operating Range

Ambient
Range
Temperature
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
All speeds
– 0.3V,
4-ns cycle, 250 MHz
– 0.3V,
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
All speeds
(AC) > –2V (Pulse width less than t
IL
CYC
< V
and V
< V
.
IH
DD
DDQ
DD
CY7C1364C
+ 0.5V
DD
V
V
DD
DDQ
3.3V –
2.5V – 5% to
5%/+10%
V
DD
Min.
Max.
Unit
3.135
3.6
V
3.135
V
V
DD
2.375
2.625
V
2.4
V
2.0
V
0.4
V
0.4
V
2.0
V
+ 0.3V
V
DD
1.7
V
+ 0.3V
V
DD
–0.3
0.8
V
–0.3
0.7
V
µA
–5
5
µA
–30
µA
5
µA
–5
µA
30
µA
–5
5
250
mA
220
mA
180
mA
130
mA
120
110
40
mA
120
mA
110
100
40
mA
/2).
Page 9 of 18
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