Cypress CY62128EV30 Specificatieblad
Blader online of download pdf Specificatieblad voor {categorie_naam} Cypress CY62128EV30. Cypress CY62128EV30 12 pagina's. Mobl 1 mbit (128k x 8) static ram
Pagina afdrukken
Features
■
Very high speed: 45 ns
❐
Temperature ranges:
• Industrial: –40°C to +85°C
• Automotive-A: –40°C to +85°C
• Automotive-E: –40°C to +125°C
■
Wide voltage range: 2.20V – 3.60V
■
Pin compatible with CY62128DV30
■
Ultra low standby power
Typical standby current: 1 μA
❐
Maximum standby current: 4 μA
❐
■
Ultra low active power
❐
Typical active current: 1.3 mA @ f = 1 MHz
■
Easy memory expansion with CE
■
Automatic power down when deselected
■
CMOS for optimum speed and power
■
Offered in Pb-free 32-pin SOIC, 32-pin TSOP I, and 32-pin
STSOP packages
Logic Block Diagram
CE 1
CE 2
Note
1. For best practice recommendations, refer to the Cypress application note "System Design Guidelines" at
Cypress Semiconductor Corporation
Document #: 38-05579 Rev. *D
MoBL® 1 Mbit (128K x 8) Static RAM
, CE
and OE features
1
2
INPUT BUFFER
A 0
A 1
A 2
A 3
A 4
A 5
128K x 8
A 6
A 7
ARRAY
A 8
A 9
A 10
A 11
COLUMN DECODER
WE
OE
•
198 Champion Court
Functional Description
[1]
The CY62128EV30
is a high performance CMOS static RAM
module organized as 128K words by 8 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption when addresses are not toggling. Placing the
device into standby mode reduces power consumption by more
than 99% when deselected (CE
input and output pins (IO
through IO
0
impedance state when the device is deselected (CE
CE
LOW), the outputs are disabled (OE HIGH), or a write
2
operation is in progress (CE
LOW).
To write to the device, take Chip Enable (CE
HIGH) and Write Enable (WE) inputs LOW. Data on the eight IO
pins is then written into the location specified on the Address pin
(A
through A
).
0
16
To read from the device, take Chip Enable (CE
HIGH) and Output Enable (OE) LOW while forcing Write Enable
(WE) HIGH. Under these conditions, the contents of the memory
location specified by the address pins appear on the IO pins.
POWER
DOWN
http://www.cypress.com.
,
•
San Jose
CA 95134-1709
CY62128EV30
®
) in portable
HIGH or CE
LOW). The eight
1
2
) are placed in a high
7
HIGH or
1
LOW and CE
HIGH and WE
1
2
LOW and CE
1
LOW and CE
1
IO 0
IO 1
IO 2
IO 3
IO 4
IO 5
IO 6
IO 7
•
408-943-2600
Revised March 28, 2008
2
2
[+] Feedback