Cypress Semiconductor CY62146EV30 Specificatieblad - Pagina 12
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Document History Page
Document Title:CY62146EV30 MoBL
Document Number: 38-05567
REV.
ECN NO. Issue Date
**
223225
See ECN
*A
247373
See ECN
*B
414807
See ECN
*C
925501
See ECN
Document #: 38-05567 Rev. *C
®
, 4-Mbit (256K x 16) Static RAM
Orig. of
Change
AJU
New Data Sheet
SYT
Changed Advance Information to Preliminary
Moved Product Portfolio to Page 2
stabilization time in footnote #8 from 100 µs to 200 µs
Changed V
CC
Removed Footnote #14(t
Changed I
CCDR
Changed typo in Data Retention Characteristics(t
Changed t
from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin
OHA
Changed t
, t
HZOE
18 ns for 45 ns Speed Bin
Changed t
and t
SCE
for 45 ns Speed Bin
Changed t
HZCE
ns Speed Bin
Changed t
from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for
SD
45 ns Speed Bin
Changed t
from 15 to 18 ns for 35 ns Speed Bin
DOE
Changed t
from 15 to 18 ns for 35 ns Speed Bin
DBE
Changed Ordering Information to include Pb-Free Packages
ZSD
Changed from Preliminary information to Final
Changed the address of Cypress Semiconductor Corporation on Page #1
from "3901 North First Street" to "198 Champion Court"
Removed 35ns Speed Bin
Removed "L" version of CY62146EV30
Changed ball E3 from DNU to NC
Removed the redundant foot note on DNU.
Changed I
(Max) value from 2 mA to 2.5 mA and I
CC
1.5 mA to 2 mA at f=1 MHz
Changed I
(Typ) value from 12 mA to 15 mA at f = f
CC
Changed I
and I
SB1
2.5 µA to 7 µA.
Changed the AC test load capacitance from 50pF to 30pF on Page# 4
Changed I
CCDR
Added I
typical value.
CCDR
Changed t
from 3 ns to 5 ns
LZOE
Changed t
and t
LZCE
Changed t
from 6 ns to 5 ns
LZBE
Changed t
HZCE
Changed t
from 30 ns to 35 ns.
PWE
Changed t
from 22 ns to 25 ns.
SD
Updated the package diagram 48-ball VFBGA from *B to *D
Updated the ordering information table and replaced the Package Name
column with Package Diagram.
VKN
Added footnote #8 related to I
Added footnote #12 related AC timing parameters
CY62146EV30 MoBL
Description of Change
) from Previous revision
LZBE
from 2.0 µA to 2.5 µA
, t
from 12 to 15 ns for 35 ns Speed Bin and 15 to
HZBE
HZWE
from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns
BW
from 12 to 18 ns for 35 ns Speed Bin and 15 to 22 ns for 45
Typ values from 0.7 µA to 1 µA and Max values from
SB2
from 2.5 µA to 7 µA.
from 6 ns to 10 ns
LZWE
from 22 ns to 18 ns
and I
SB2
CCDR
®
) from 100 µs to t
ns
R
RC
(Typ) value from
CC
max
Page 12 of 12