Cypress Semiconductor MoBL CY62157EV30 Specificatieblad - Pagina 5

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Cypress Semiconductor MoBL CY62157EV30 Specificatieblad

Thermal Resistance

[10]
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
AC Test Loads and Waveforms
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Over the Operating Range
Parameter
Description
V
V
for Data Retention
DR
CC
[9]
I
Data Retention Current
CCDR
[10]
t
Chip Deselect to Data
CDR
Retention Time
[11]
t
Operation Recovery Time
R
Data Retention Waveform
V
CC
CE
or
1
BHE.BLE
or
CE
2
Notes
11. Full device operation requires linear V
12. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.
Document #: 38-05445 Rev. *E
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
Figure 1. AC Test Loads and Waveforms
R1
V
CC
GND
Rise Time = 1 V/ns
R2
Equivalent to:
2.5V
16667
15385
8000
1.20
V
= 1.5V, CE
> V
CC
1
CE
< 0.2V , V
> V
2
IN
CC
[12]
Figure 2. Data Retention Waveform
V
CC(min)
t
CDR
> 100 µs or stable at V
ramp from V
to V
CC
DR
CC(min)
BGA
72
8.86
ALL INPUT PULSES
90%
10%
THÉ VENIN EQUIVALENT
R
OUTPUT
3.0V
1103
1554
645
1.75
Conditions
– 0.2V,
Ind'l/Auto-A
CC
– 0.2V or V
< 0.2V
IN
DATA RETENTION MODE
V
> 1.5V
DR
> 100 µs.
CC(min)
CY62157EV30 MoBL
TSOP I
TSOP II
°C/W
74.88
76.88
°C/W
8.6
13.52
90%
10%
Fall Time = 1 V/ns
TH
V
TH
Unit
Ω
Ω
Ω
V
[2]
Min
Typ
Max Unit
1.5
2
5
0
t
RC
V
CC(min)
t
R
Page 5 of 14
®
Unit
V
µA
ns
ns
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