GaN EZ Drive GS65011-EVBEZ Podręcznik techniczny - Strona 16
Przeglądaj online lub pobierz pdf Podręcznik techniczny dla Płyta główna GaN EZ Drive GS65011-EVBEZ. GaN EZ Drive GS65011-EVBEZ 18 stron. E-hemt open loop boost evaluation board
Drukuj stronę
_____________________________________________________________________________________________________________________
Thermal Considerations
The EVB includes one GS-065-011-1-L GaN E-HEMT. Although the electrical performance
surpasses that for traditional silicon devices, their relatively smaller size does magnify the
thermal management requirements. The evaluation board is intended for bench evaluation
under low ambient temperature and with convection cooling. The addition of heat-sinking
and forced air cooling can significantly increase the current rating of these devices, but care
must be taken to not exceed the absolute maximum junction temperature of +150 °C.
Note: The EVB does not include any on-board current or thermal protection.
The thermal performance of the EVB is shown in
was performed under the following conditions, with a fan on at room-ambient temperature:
• V
= 200V
IN
• V
= 400V
OUT
• I
= 0.5A
OUT
• f
= 250 KHz
SW
Thermal imaging with an external fan (T
Figure 11 •
Technical Resources
This document and additional technical resources are available for download from
www.gansystems.com.
GSWPT-EVBEZ Rev. 210307
EZDrive
© 2021 GaN Systems Inc.
Please refer to the Evaluation Board/Kit Important Notice on page 17
®
Open Loop Boost Evaluation Board
Figure 10
and
Figure
11. Infrared thermography
= 44.8˚C)
MAX
www.gansystems.com
GS65011-EVBEZ
Technical Manual
16