EPC EPC9079 Skrócona instrukcja obsługi - Strona 4

Przeglądaj online lub pobierz pdf Skrócona instrukcja obsługi dla Płyta główna EPC EPC9079. EPC EPC9079 6 stron. 200 v half-bridge with gate drive, using epc2046

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EPC EPC9079 Skrócona instrukcja obsługi
QUICK START GUIDE

THERMAL CONSIDERATIONS

The EPC9079 development board showcases the EPC2046 eGaN FET. The
EPC9079 is intended for bench evaluation with typical room ambient
temperature. The addition of heat-sinking and forced air cooling can
significantly increase the current capability of these devices, but care
must be taken to not exceed the absolute maximum die temperature
of 150° C.
Table 2: Bill of Materials
Item
Qty
1
5
2
1
3
4
4
4
5
1
6
1
7
10
8
2
9
1
10
2
11
2
12
3
13
1
14
2
15
1
16
1
17
2
18
2
19
1
20
2
21
1
22
1
23
4
24
2
25
2
26
2
27
1
28
1
29
1
30
2
31
0
32
0
33
0
4 |
Reference
Part Description
C1, C2, C3, C10, C11
Capacitor, 1 µF, 10%, 25 V, X5R
C6
Capacitor, 100 pF, 5%, 50 V, NP0
C8, C9, C12, C13
Capacitor, 0.22 µF, 16%, 25 V, X7R
C16, C17, C18, C19
Capacitor, 0.1 µF, 10%, 250 V, X7T
C41
Capacitor, 10 pF, 5%, 50 V, NP0
C42
Capacitor, 100 pF, 5%, 50 V, NP0
C60, C61, C62, C63, C64, C65,
Capacitor, 0.22 µF, 10%, 250 V, X7T
C66, C67, C68, C69
D1, D2
Schottky Diode, 30 V, 30 mA
D3
Diode, 200 V, 1 A
D4, D5
Diode, 40 V, 200 mA
D6, D7
Diode, 5.61 V, 500 mW
FD1, FD2, FD3
SML Fiductial
GP1
Connector, .1" Male Vert.
J1, SWP1
Connector, .1" Male Vert.
J2
Connector, .1" Male Vert.
J3, J4, J5, J6, J7, J8
Connector, .1" Male Vert.
J21, J22
Connector, MMCX SMD
Q1, Q2
R1
Resistor, 10.0 K, 1%, 1/10 W
R2, R3
Resistor, 0 Ω, 1/10 W
R4
Resistor, 100 Ω, 1%, 1/10 W
R5
Resistor, 470 Ω, 1%, 1/10 W
R6
Resistor, 0 Ω, 1/10 W
R11, R12
Resistor, 1 Ω, 1%, 1/16 W
R21, R22
Resistor, 0 Ω, 1/16 W
TP1, TP2
Test Point
U1
IC, Logic
U2
IC, Opto-coupler
U4
IC, Logic
U6, U7
IC, Gate driver
P1, P2
Optional potentiometer
R14, R15
Optional resistor
U5
Optional IC
| EPC – EFFICIENT POWER CONVERSION CORPORATION |
NOTE. The EPC9079 development board does not have any current or thermal
protection on board.
For more information regarding the thermal performance of EPC eGaN FETs, please
consult:
D. Reusch and J. Glaser, DC-DC Converter Handbook, a supplement to GaN Transistors for
Efficient Power Conversion, First Edition, Power Conversion Publications, 2015.
eGaN® FET, 200 V, 25 mΩ
Manufacturer / Part #
Murata, GRM188R61E105KA12D
TDK, CGA3E2C0G1H101J080AA
TDK, C1005X7R1C224K050BC
TDK, C2012X7T2E104K125AA
Kemet, C0402C100J5GACTU
TDK, C1005C0G1H101J050BA
TDK, C3216X7T2E224K160AA
Diodes Inc., SDM03U40-7
Diodes Inc., DFLS1200
Diodes Inc., BAS40LP-7
On Semiconductor, MM5Z5V6ST1G
N/A
Wurth, 61300111121
Wurth, 61300211121
4 pins of Tyco, 4-103185-0-04
4 pins of FCI, 68602-224HLF
Molex, 0734152063
EPC, EPC2046
Stackpole, RMCF0603FT10K0
Panasonic, ERJ-3GEY0R00V
Stackpole, RMCF0603FT100R
Stackpole, RMCF0603FT470R
Panasonic, ERJ-2GE0R00X
Stackpole, RMCF0402FT1R00
Stackpole, RMCF0402ZT0R00
Keystone Elect, 5015
Fairchild, NC7SZ00L6X
Silicon Labs, Si8610BC
Fairchild, NC7SZ08L6X
Texas Instruments, UCC27611
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EPC9079
| COPYRIGHT 2017