Cypress Semiconductor CY62147DV18 Arkusz specyfikacji - Strona 4

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Electrical Characteristics Over the Operating Range
Parameter
Description
I
Automatic CE
SB1
Power-Down
Current —
CMOS Inputs
I
Automatic CE
SB2
Power-down
Current —
CMOS Inputs
Capacitance
for all Packages
Parameter
C
Input Capacitance
IN
C
Output Capacitance
OUT

Thermal Resistance

Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
AC Test Loads and Waveforms
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Parameter
V
V
for Data Retention
DR
CC
I
Data Retention Current
CCDR
[8]
t
Chip Deselect to Data Retention Time
CDR
t
Operation Recovery Time
R
Notes:
8.
Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05343 Rev. *B
Test Conditions
−0.2V,
CE > V
V
CC
CC(max)
V
>V
–0.2V,
IN
CC
V
<0.2V); f = f
IN
MAX
V
(Address and Data
CC(max)
Only), f = 0 (OE,
WE, BHE and BLE)
CE > V
– 0.2V,
V
CC
CC(max)
V
> V
– 0.2V or
IN
CC
V
< 0.2V, f = 0
IN
V
CC(max)
[8]
Description
T
V
Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit
[8]
board
[8]
R1
V
CC
GND
Rise Time = 1 V/ns
R2
Equivalent to:
(Over the Operating Range)
Description
V
CC
V
IN
(continued)
CY62147DV18-55
[7]
Min. Typ.
=1.95V
L
0.5
LL
=2.25V
L
0.5
LL
=1.95V
L
0.5
LL
=2.25V
L
0.5
LL
Test Conditions
= 25°C, f = 1 MHz,
A
= V
CC
CC(typ)
Test Conditions
ALL INPUT PULSES
90%
10%
THÉ VENIN EQUIVALENT
R
OUTPUT
1.80V
13500
10800
6000
0.80
Conditions
= 1.0V CE > V
– 0.2V,
CC
> V
– 0.2V or V
< 0.2V
CC
IN
CY62147DV18
MoBL2™
CY62147DV18-70
[7]
Max.
Min. Typ.
Max.
12
0.5
12
8
8
18
0.5
18
12
12
12
0.5
12
8
8
18
0.5
18
12
12
Max.
Unit
10
pF
10
pF
BGA
75
10
90%
10%
Fall Time = 1 V/ns
TH
V
Unit
Ω
Ω
Ω
V
[7]
Min.
Typ.
Max.
1.0
L
6
LL
4
0
t
RC
Page 4 of 11
Unit
µA
µA
Unit
°C/W
°C/W
Unit
V
µA
ns
ns
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