Cypress Semiconductor CY62147EV30 MoBL Podręcznik - Strona 4

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Cypress Semiconductor CY62147EV30 MoBL Podręcznik

Thermal Resistance

[9]
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Over the Operating Range
Parameter
Description
V
V
for Data Retention
DR
CC
[8]
I
Data Retention Current
CCDR
[9]
t
Chip Deselect to Data Retention Time
CDR
[10]
t
Operation Recovery Time
R
V
CC
CE or
BHE.BLE
Notes
10. Full device operation requires linear V
11. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling both BHE and BLE.
Document #: 38-05440 Rev. *G
Test Conditions
Still Air, soldered on a 3 × 4.5 inch, two-layer
printed circuit board
Figure 4. AC Test Load and Waveforms
V
CC
GND
R2
Rise Time = 1 V/ns
Equivalent to: THEVENIN EQUIVALENT
OUTPUT
2.50V
16667
15385
8000
1.20
V
= 1.5V, CE > V
CC
V
> V
IN
CC
Figure 5. Data Retention Waveform
DATA RETENTION MODE
V
CC(min)
t
CDR
> 100 μs or stable at V
ramp from V
to V
CC
DR
CC(min)
VFBGA
Package
ALL INPUT PULSES
90%
10%
R
TH
V
3.0V
1103
1554
645
1.75
Conditions
– 0.2V,
Ind'l/Auto-A
CC
– 0.2V or V
< 0.2V
IN
Auto-E
1
[
, 11]
V
> 1.5V
DR
> 100 μs.
CC(min)
CY62147EV30 MoBL
TSOP II
Unit
Package
°C/W
75
77
°C/W
10
13
90%
10%
Fall Time = 1 V/ns
Unit
Ω
Ω
Ω
V
[2]
Min
Typ
Max Unit
1.5
0.8
7
12
0
t
RC
V
CC(min)
t
R
Page 4 of 13
®
V
μA
ns
ns
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