Cypress Semiconductor CY62148EV30 Arkusz specyfikacji - Strona 4

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Capacitance
(For All packages)
Parameter
Description
C
Input Capacitance
IN
C
Output Capacitance
OUT

Thermal Resistance

Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Parameter
Description
V
V
for Data Retention
DR
CC
[9]
I
Data Retention Current
CCDR
[10]
t
Chip Deselect to Data Retention Time
CDR
[11]
t
Operation Recovery Time
R
Data Retention Waveform
V
CC
CE
Notes
10. Tested initially and after any design or process changes that may affect these parameters.
11. Full device AC operation requires linear V
Document #: 38-05576 Rev. *G
[10]
Test Conditions
T
= 25°C, f = 1 MHz,
A
V
= V
CC
CC(typ)
[10]
Test Conditions
Still Air, soldered on a 3 x 4.5 inch,
two-layer printed circuit board
R2
Rise Time = 1 V/ns
Equivalent to:
THEVENIN
OUTPUT
2.50V
16667
15385
8000
1.20
(Over the Operating Range)
V
= 1.5V, CE > V
CC
V
> V
IN
0.2V
V
CC(min)
t
CDR
ramp from V
to V
CC
DR
CC(min)
VFBGA
Package
72
8.86
ALL INPUT PULSES
V
CC
90%
10%
GND
EQUIVALENT
R
TH
V
3.0V
1103
1554
645
1.75
Conditions
– 0.2V,
Ind'l/Auto-A
CC
– 0.2V or V
<
CC
IN
DATA RETENTION MODE
V
> 1.5V
DR
> 100 μs or stable at V
> 100 μs.
CC(min)
®
MoBL
CY62148EV30
Max
Unit
10
pF
10
pF
TSOP II
SOIC
Unit
Package
Package
°C/W
75.13
55
°C/W
8.95
22
90%
10%
Fall Time = 1 V/ns
Unit
Ω
Ω
Ω
V
[4]
Min
Typ
Max
1.5
0.8
7
0
t
RC
V
CC(min)
t
R
Page 4 of 12
Unit
V
μA
ns
ns
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